SOI MESFETs on high-resistivity, trap-rich substrates

Payam Mehr; Xiong Zhang; William Lepkowski; Chaojiang Li; Trevor Thornton

doi:10.1016/j.sse.2018.02.003

SOI MESFETs on high-resistivity, trap-rich substrates

Payam Mehr, Xiong Zhang, William Lepkowski, Chaojiang Li, Trevor Thornton

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, f_max, that are approximately 5–10% higher. The increased f_max is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.

Original language	English (US)
Pages (from-to)	47-51
Number of pages	5
Journal	Solid-State Electronics
Volume	142
DOIs	https://doi.org/10.1016/j.sse.2018.02.003
State	Published - Apr 2018

Keywords

MESFETs
Maximum available gain
Partially-depleted
Silicon-on-insulator
Spice model

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2018.02.003

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title = "SOI MESFETs on high-resistivity, trap-rich substrates",

abstract = "The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5–10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.",

keywords = "MESFETs, Maximum available gain, Partially-depleted, Silicon-on-insulator, Spice model",

author = "Payam Mehr and Xiong Zhang and William Lepkowski and Chaojiang Li and Trevor Thornton",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

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doi = "10.1016/j.sse.2018.02.003",

language = "English (US)",

volume = "142",

pages = "47--51",

journal = "Solid-State Electronics",

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TY - JOUR

T1 - SOI MESFETs on high-resistivity, trap-rich substrates

AU - Mehr, Payam

AU - Zhang, Xiong

AU - Lepkowski, William

AU - Li, Chaojiang

AU - Thornton, Trevor

PY - 2018/4

Y1 - 2018/4

N2 - The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5–10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.

AB - The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5–10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.

KW - MESFETs

KW - Maximum available gain

KW - Partially-depleted

KW - Silicon-on-insulator

KW - Spice model

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SN - 0038-1101

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SP - 47

EP - 51

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

SOI MESFETs on high-resistivity, trap-rich substrates

Abstract

Keywords

ASJC Scopus subject areas

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