Abstract

The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ~2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax , that are approximately 5-10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.

Original languageEnglish (US)
JournalSolid-State Electronics
DOIs
StateAccepted/In press - Jan 1 2018

Fingerprint

MISFET devices
MIS (semiconductors)
Silicon
field effect transistors
traps
electrical resistivity
silicon
Substrates
direct current
insulators
MESFET devices
CMOS
conduction
metals

Keywords

  • Maximum available gain
  • MESFETs
  • Partially-depleted
  • Silicon-on-insulator
  • Spice model

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

SOI MESFETs on high-resistivity, trap-rich substrates. / Mehr, Payam; Zhang, Xiong; Lepkowski, William; Li, Chaojiang; Thornton, Trevor.

In: Solid-State Electronics, 01.01.2018.

Research output: Contribution to journalArticle

Mehr, Payam ; Zhang, Xiong ; Lepkowski, William ; Li, Chaojiang ; Thornton, Trevor. / SOI MESFETs on high-resistivity, trap-rich substrates. In: Solid-State Electronics. 2018.
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