Abstract

Ultrathin channel metal-semiconductor field-effecttransistors (MESFETs) have been fabricated using fully depleted silicon-on-insulator CMOS foundries with no changes to the process flow. The Schottky gate of the MESFET is formed from a metal silicide that consumes most of the thin (<50 nm) FD- SOI channel and fully depletes the remaining underlying silicon. Therefore, unlike partially depleted SOI MESFETs with a thicker silicon layer (∼200 nm), the conducting channel of the FD-SOI MESFET cannot be formed directly under the Schottky gate. Instead, current flow in the FD-SOI MESFET is confined between islands of silicide that deplete the conducting channel in a lateral direction. The FD-SOI MESFETs operate as depletion mode devices with a threshold voltage that can be adjusted by varying the separation between the silicide islands. Both n- and p-channel devices can be realized using the same gate material on a common FD-SOI substrate.

Original languageEnglish (US)
Pages (from-to)678-680
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number6
DOIs
StatePublished - Jul 1 2009

Keywords

  • CMOS processing
  • Fully depleted
  • Metal-semiconductor field-effect-transistors (MESFETs)
  • Schottky junction
  • Silicon-on-insulator (SOI)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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