Abstract
Ultrathin channel metal-semiconductor field-effecttransistors (MESFETs) have been fabricated using fully depleted silicon-on-insulator CMOS foundries with no changes to the process flow. The Schottky gate of the MESFET is formed from a metal silicide that consumes most of the thin (<50 nm) FD- SOI channel and fully depletes the remaining underlying silicon. Therefore, unlike partially depleted SOI MESFETs with a thicker silicon layer (∼200 nm), the conducting channel of the FD-SOI MESFET cannot be formed directly under the Schottky gate. Instead, current flow in the FD-SOI MESFET is confined between islands of silicide that deplete the conducting channel in a lateral direction. The FD-SOI MESFETs operate as depletion mode devices with a threshold voltage that can be adjusted by varying the separation between the silicide islands. Both n- and p-channel devices can be realized using the same gate material on a common FD-SOI substrate.
Original language | English (US) |
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Pages (from-to) | 678-680 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 30 |
Issue number | 6 |
DOIs | |
State | Published - 2009 |
Keywords
- CMOS processing
- Fully depleted
- Metal-semiconductor field-effect-transistors (MESFETs)
- Schottky junction
- Silicon-on-insulator (SOI)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering