Abstract

A high voltage compliance silicon metal-semiconductor-field-effect- transistor (MESFET) fabricated using a 45nm SOI CMOS process has been designed for RF power amplifier applications requiring Pout greater than 1W. The breakdown voltage of the MESFET is more than 15V and allows a large-signal drain voltage swing that greatly exceeds the breakdown of the 45nm CMOS. The DC and AC characteristics of the MESFET have been used to extract an Angelov Spice model of the device for simulation of the RF power amplifier. A Class AB MESFET PA was designed for operation at 900 MHz and demonstrated a peak power added efficiency of 37.6 %, gain of 11.1 dB, OIP3 of 39.3 dBm and 1 dB compression point at an output power of 31.6 dBm. The first measurements of a SOI MESFET 2GHz RF power amplifier are also shown.

Original languageEnglish (US)
Title of host publicationPAWR 2014 - Proceedings: 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications
PublisherIEEE Computer Society
Pages55-57
Number of pages3
ISBN (Print)9781479927784
DOIs
StatePublished - 2014
Event2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2014 - Newport Beach, CA, United States
Duration: Jan 19 2014Jan 22 2014

Other

Other2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2014
CountryUnited States
CityNewport Beach, CA
Period1/19/141/22/14

Fingerprint

MESFET devices
Power amplifiers
Electric potential
Electric breakdown
Silicon

Keywords

  • Angelov model
  • MESFETs
  • power amplifiers
  • silicon-on-insulator (SOI)

ASJC Scopus subject areas

  • Computer Networks and Communications

Cite this

Wilk, S. J., Lepkowski, W., & Thornton, T. (2014). SOI MESFET RF power amplifiers at the 45nm node. In PAWR 2014 - Proceedings: 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (pp. 55-57). [6825725] IEEE Computer Society. https://doi.org/10.1109/PAWR.2014.6825725

SOI MESFET RF power amplifiers at the 45nm node. / Wilk, Seth J.; Lepkowski, William; Thornton, Trevor.

PAWR 2014 - Proceedings: 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications. IEEE Computer Society, 2014. p. 55-57 6825725.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wilk, SJ, Lepkowski, W & Thornton, T 2014, SOI MESFET RF power amplifiers at the 45nm node. in PAWR 2014 - Proceedings: 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications., 6825725, IEEE Computer Society, pp. 55-57, 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2014, Newport Beach, CA, United States, 1/19/14. https://doi.org/10.1109/PAWR.2014.6825725
Wilk SJ, Lepkowski W, Thornton T. SOI MESFET RF power amplifiers at the 45nm node. In PAWR 2014 - Proceedings: 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications. IEEE Computer Society. 2014. p. 55-57. 6825725 https://doi.org/10.1109/PAWR.2014.6825725
Wilk, Seth J. ; Lepkowski, William ; Thornton, Trevor. / SOI MESFET RF power amplifiers at the 45nm node. PAWR 2014 - Proceedings: 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications. IEEE Computer Society, 2014. pp. 55-57
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