SOI low frequency noise and interface trap density measurements with the pseudo MOSFET

V. A. Kushner, J. Yang, J. Y. Choi, Trevor Thornton, D. K. Schroder

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Low frequency noise (LFN) is important in analog and digital circuits. In analog circuits it affects the performance of low-noise amplifiers and the phase noise (1) of voltage-controlled oscillators (2). In digital circuits it becomes more important as the supply voltage is reduced and it degrades substrate noise coupling. Low-frequency noise is due to interactions of the channel carriers with oxide/semiconductor interface traps and oxide charges and is very dependent on the quality of the oxide/semiconductor interface and noise measurements can give important information about such interfaces and defects (3). Silicon-on-insulator devices have two oxide/semiconductor interfaces and the bottom interface is generally worse than the top interface. Most LFN measurements are made after MOSFET fabrication, but it is desirable to characterize such materials without fabricating devices. In this paper we discuss silicon-on-insulator (SOI) low-frequency noise and interface trap density measurements using a Ground-Signal-Ground (GSG) pseudo-MOSFET structure with minimum fabrication. Copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationSilicon Materials Science and Technology X
PublisherElectrochemical Society Inc.
Pages491-502
Number of pages12
Edition2
ISBN (Print)156677439X, 9781566774390
DOIs
StatePublished - 2006
Event10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: May 7 2006May 12 2006

Publication series

NameECS Transactions
Number2
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period5/7/065/12/06

ASJC Scopus subject areas

  • Engineering(all)

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    Kushner, V. A., Yang, J., Choi, J. Y., Thornton, T., & Schroder, D. K. (2006). SOI low frequency noise and interface trap density measurements with the pseudo MOSFET. In Silicon Materials Science and Technology X (2 ed., pp. 491-502). (ECS Transactions; Vol. 2, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.2195684