SOI low frequency noise and interface trap density measurements with the pseudo MOSFET

V. A. Kushner, J. Yang, J. Y. Choi, Trevor Thornton, D. K. Schroder

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Low frequency noise (LFN) is important in analog and digital circuits. In analog circuits it affects the performance of low-noise amplifiers and the phase noise (1) of voltage-controlled oscillators (2). In digital circuits it becomes more important as the supply voltage is reduced and it degrades substrate noise coupling. Low-frequency noise is due to interactions of the channel carriers with oxide/semiconductor interface traps and oxide charges and is very dependent on the quality of the oxide/semiconductor interface and noise measurements can give important information about such interfaces and defects (3). Silicon-on-insulator devices have two oxide/semiconductor interfaces and the bottom interface is generally worse than the top interface. Most LFN measurements are made after MOSFET fabrication, but it is desirable to characterize such materials without fabricating devices. In this paper we discuss silicon-on-insulator (SOI) low-frequency noise and interface trap density measurements using a Ground-Signal-Ground (GSG) pseudo-MOSFET structure with minimum fabrication. Copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages491-502
Number of pages12
Volume2
Edition2
StatePublished - 2006
Event10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: May 7 2006May 12 2006

Other

Other10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period5/7/065/12/06

Fingerprint

Silicon
Digital circuits
Analog circuits
Fabrication
Low noise amplifiers
Variable frequency oscillators
Beam plasma interactions
Phase noise
Defects
Oxides
Electric potential
Substrates
Oxide semiconductors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kushner, V. A., Yang, J., Choi, J. Y., Thornton, T., & Schroder, D. K. (2006). SOI low frequency noise and interface trap density measurements with the pseudo MOSFET. In ECS Transactions (2 ed., Vol. 2, pp. 491-502)

SOI low frequency noise and interface trap density measurements with the pseudo MOSFET. / Kushner, V. A.; Yang, J.; Choi, J. Y.; Thornton, Trevor; Schroder, D. K.

ECS Transactions. Vol. 2 2. ed. 2006. p. 491-502.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kushner, VA, Yang, J, Choi, JY, Thornton, T & Schroder, DK 2006, SOI low frequency noise and interface trap density measurements with the pseudo MOSFET. in ECS Transactions. 2 edn, vol. 2, pp. 491-502, 10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society, Denver, CO, United States, 5/7/06.
Kushner VA, Yang J, Choi JY, Thornton T, Schroder DK. SOI low frequency noise and interface trap density measurements with the pseudo MOSFET. In ECS Transactions. 2 ed. Vol. 2. 2006. p. 491-502
Kushner, V. A. ; Yang, J. ; Choi, J. Y. ; Thornton, Trevor ; Schroder, D. K. / SOI low frequency noise and interface trap density measurements with the pseudo MOSFET. ECS Transactions. Vol. 2 2. ed. 2006. pp. 491-502
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