SnGe superstructure materials for Si-based infrared optoelectronics

M. R. Bauer; C. S. Cook; P. Aella; J. Tolle; John Kouvetakis; Peter Crozier; Andrew Chizmeshya; David Smith; S. Zollner

doi:10.1063/1.1622435

SnGe superstructure materials for Si-based infrared optoelectronics

M. R. Bauer, C. S. Cook, P. Aella, J. Tolle, John Kouvetakis, Peter Crozier, Andrew Chizmeshya, David Smith, S. Zollner

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

SnGe superstructure materials for Si-based infrared optoelectronics were studied. Single crystal Sn_xGe_1-x alloys (x = 0.02-0.2) were grown directly on Si via chemical vapor deposition with deuterium-stabilized Sn hydrides. Optical measurement results showed that the band gaps get narrow when Sn concentration was increased.

Original language	English (US)
Pages (from-to)	3489-3491
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	17
DOIs	https://doi.org/10.1063/1.1622435
State	Published - Oct 27 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "SnGe superstructure materials for Si-based infrared optoelectronics were studied. Single crystal SnxGe1-x alloys (x = 0.02-0.2) were grown directly on Si via chemical vapor deposition with deuterium-stabilized Sn hydrides. Optical measurement results showed that the band gaps get narrow when Sn concentration was increased.",

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AU - Bauer, M. R.

AU - Cook, C. S.

AU - Aella, P.

AU - Tolle, J.

AU - Kouvetakis, John

AU - Crozier, Peter

AU - Chizmeshya, Andrew

AU - Smith, David

AU - Zollner, S.

PY - 2003/10/27

Y1 - 2003/10/27

N2 - SnGe superstructure materials for Si-based infrared optoelectronics were studied. Single crystal SnxGe1-x alloys (x = 0.02-0.2) were grown directly on Si via chemical vapor deposition with deuterium-stabilized Sn hydrides. Optical measurement results showed that the band gaps get narrow when Sn concentration was increased.

AB - SnGe superstructure materials for Si-based infrared optoelectronics were studied. Single crystal SnxGe1-x alloys (x = 0.02-0.2) were grown directly on Si via chemical vapor deposition with deuterium-stabilized Sn hydrides. Optical measurement results showed that the band gaps get narrow when Sn concentration was increased.

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SnGe superstructure materials for Si-based infrared optoelectronics

Abstract

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