SnGe superstructure materials for Si-based infrared optoelectronics

M. R. Bauer, C. S. Cook, P. Aella, J. Tolle, John Kouvetakis, Peter Crozier, Andrew Chizmeshya, David Smith, S. Zollner

Research output: Contribution to journalArticle

38 Scopus citations

Abstract

SnGe superstructure materials for Si-based infrared optoelectronics were studied. Single crystal SnxGe1-x alloys (x = 0.02-0.2) were grown directly on Si via chemical vapor deposition with deuterium-stabilized Sn hydrides. Optical measurement results showed that the band gaps get narrow when Sn concentration was increased.

Original languageEnglish (US)
Pages (from-to)3489-3491
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number17
DOIs
StatePublished - Oct 27 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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