Abstract
Sn-doped Bi 2 Te 3 films were grown on vicinal GaAs (0 0 1) substrates by metal-organic chemical vapor deposition at 360 °C. Trimethylbismuth and diisopropyltellurium, which are alkyl-based, were used as the Bi and Te sources, respectively. Tetrakis(dimethylamino)tin (TDMASn) and tetramethyltin (TMSn) were used as the Sn precursors. Both Sn precursors successfully converted the carrier type of the Bi 2 Te 3 films from n- to p-type and achieved a high Seebeck coefficient. In the case of the Sn-doped Bi 2 Te 3 films with TDMASn, however, the Sn concentration could not be monotonically controlled by the amount of the precursor, and even the hole concentration was almost invariant despite the drastic increase in the amount of the precursor. In the case of the Sn-doped Bi 2 Te 3 films grown with TMSn, on the other hand, the Sn and hole concentrations could be easily controlled by the variation in the flow rate of the H 2 carrier gas. In particular, the hole concentration varied over a range of 1-5 × 10 19 /cm 3 in which a thermoelectric power factor can be maximized despite a very high vapor pressure of TMSn. The growth of high-quality Sn-doped Bi 2 Te 3 films was possible using all alkyl-based precursors.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 232-237 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 353 |
| DOIs | |
| State | Published - Oct 30 2015 |
| Externally published | Yes |
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Keywords
- Bi Te films
- Chemical vapor deposition
- Epitaxial growth
- p-type
- Seebeck enhancement
- Sn doping
ASJC Scopus subject areas
- Surfaces, Coatings and Films
Cite this
Sn doping in thermoelectric Bi 2 Te 3 films by metal-organic chemical vapor deposition . / Kim, Kwang Chon; Kwon, Beomjin; Kim, Hyun Jae; Baek, Seung Hyub; Hyun, Dow Bin; Kim, Seong Keun; Kim, Jin Sang.
In: Applied Surface Science, Vol. 353, 30.10.2015, p. 232-237.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Sn doping in thermoelectric Bi 2 Te 3 films by metal-organic chemical vapor deposition
AU - Kim, Kwang Chon
AU - Kwon, Beomjin
AU - Kim, Hyun Jae
AU - Baek, Seung Hyub
AU - Hyun, Dow Bin
AU - Kim, Seong Keun
AU - Kim, Jin Sang
PY - 2015/10/30
Y1 - 2015/10/30
N2 - Sn-doped Bi 2 Te 3 films were grown on vicinal GaAs (0 0 1) substrates by metal-organic chemical vapor deposition at 360 °C. Trimethylbismuth and diisopropyltellurium, which are alkyl-based, were used as the Bi and Te sources, respectively. Tetrakis(dimethylamino)tin (TDMASn) and tetramethyltin (TMSn) were used as the Sn precursors. Both Sn precursors successfully converted the carrier type of the Bi 2 Te 3 films from n- to p-type and achieved a high Seebeck coefficient. In the case of the Sn-doped Bi 2 Te 3 films with TDMASn, however, the Sn concentration could not be monotonically controlled by the amount of the precursor, and even the hole concentration was almost invariant despite the drastic increase in the amount of the precursor. In the case of the Sn-doped Bi 2 Te 3 films grown with TMSn, on the other hand, the Sn and hole concentrations could be easily controlled by the variation in the flow rate of the H 2 carrier gas. In particular, the hole concentration varied over a range of 1-5 × 10 19 /cm 3 in which a thermoelectric power factor can be maximized despite a very high vapor pressure of TMSn. The growth of high-quality Sn-doped Bi 2 Te 3 films was possible using all alkyl-based precursors.
AB - Sn-doped Bi 2 Te 3 films were grown on vicinal GaAs (0 0 1) substrates by metal-organic chemical vapor deposition at 360 °C. Trimethylbismuth and diisopropyltellurium, which are alkyl-based, were used as the Bi and Te sources, respectively. Tetrakis(dimethylamino)tin (TDMASn) and tetramethyltin (TMSn) were used as the Sn precursors. Both Sn precursors successfully converted the carrier type of the Bi 2 Te 3 films from n- to p-type and achieved a high Seebeck coefficient. In the case of the Sn-doped Bi 2 Te 3 films with TDMASn, however, the Sn concentration could not be monotonically controlled by the amount of the precursor, and even the hole concentration was almost invariant despite the drastic increase in the amount of the precursor. In the case of the Sn-doped Bi 2 Te 3 films grown with TMSn, on the other hand, the Sn and hole concentrations could be easily controlled by the variation in the flow rate of the H 2 carrier gas. In particular, the hole concentration varied over a range of 1-5 × 10 19 /cm 3 in which a thermoelectric power factor can be maximized despite a very high vapor pressure of TMSn. The growth of high-quality Sn-doped Bi 2 Te 3 films was possible using all alkyl-based precursors.
KW - Bi Te films
KW - Chemical vapor deposition
KW - Epitaxial growth
KW - p-type
KW - Seebeck enhancement
KW - Sn doping
UR - http://www.scopus.com/inward/record.url?scp=84941945363&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84941945363&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2015.06.106
DO - 10.1016/j.apsusc.2015.06.106
M3 - Article
AN - SCOPUS:84941945363
VL - 353
SP - 232
EP - 237
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -