Sn doping in thermoelectric Bi                         2                         Te                         3                          films by metal-organic chemical vapor deposition

Kwang Chon Kim; Beomjin Kwon; Hyun Jae Kim; Seung Hyub Baek; Dow Bin Hyun; Seong Keun Kim; Jin Sang Kim

doi:10.1016/j.apsusc.2015.06.106

Sn doping in thermoelectric Bi ₂ Te ₃ films by metal-organic chemical vapor deposition

Kwang Chon Kim, Beomjin Kwon, Hyun Jae Kim, Seung Hyub Baek, Dow Bin Hyun, Seong Keun Kim, Jin Sang Kim

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Sn-doped Bi ₂ Te ₃ films were grown on vicinal GaAs (0 0 1) substrates by metal-organic chemical vapor deposition at 360 °C. Trimethylbismuth and diisopropyltellurium, which are alkyl-based, were used as the Bi and Te sources, respectively. Tetrakis(dimethylamino)tin (TDMASn) and tetramethyltin (TMSn) were used as the Sn precursors. Both Sn precursors successfully converted the carrier type of the Bi ₂ Te ₃ films from n- to p-type and achieved a high Seebeck coefficient. In the case of the Sn-doped Bi ₂ Te ₃ films with TDMASn, however, the Sn concentration could not be monotonically controlled by the amount of the precursor, and even the hole concentration was almost invariant despite the drastic increase in the amount of the precursor. In the case of the Sn-doped Bi ₂ Te ₃ films grown with TMSn, on the other hand, the Sn and hole concentrations could be easily controlled by the variation in the flow rate of the H ₂ carrier gas. In particular, the hole concentration varied over a range of 1-5 × 10 ¹⁹ /cm ³ in which a thermoelectric power factor can be maximized despite a very high vapor pressure of TMSn. The growth of high-quality Sn-doped Bi ₂ Te ₃ films was possible using all alkyl-based precursors.

Original language	English (US)
Pages (from-to)	232-237
Number of pages	6
Journal	Applied Surface Science
Volume	353
DOIs	https://doi.org/10.1016/j.apsusc.2015.06.106
State	Published - Oct 30 2015
Externally published	Yes

Keywords

Bi Te films
Chemical vapor deposition
Epitaxial growth
Seebeck enhancement
Sn doping
p-type

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2015.06.106

Cite this

Kim, K. C., Kwon, B., Kim, H. J., Baek, S. H., Hyun, D. B., Kim, S. K., & Kim, J. S. (2015). Sn doping in thermoelectric Bi ₂ Te ₃ films by metal-organic chemical vapor deposition Applied Surface Science, 353, 232-237. https://doi.org/10.1016/j.apsusc.2015.06.106

Sn doping in thermoelectric Bi ₂ Te ₃ films by metal-organic chemical vapor deposition . / Kim, Kwang Chon; Kwon, Beomjin; Kim, Hyun Jae et al.

In: Applied Surface Science, Vol. 353, 30.10.2015, p. 232-237.

Research output: Contribution to journal › Article › peer-review

Kim, KC, Kwon, B, Kim, HJ, Baek, SH, Hyun, DB, Kim, SK & Kim, JS 2015, ' Sn doping in thermoelectric Bi ₂ Te ₃ films by metal-organic chemical vapor deposition ', Applied Surface Science, vol. 353, pp. 232-237. https://doi.org/10.1016/j.apsusc.2015.06.106

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title = " Sn doping in thermoelectric Bi 2 Te 3 films by metal-organic chemical vapor deposition ",

abstract = " Sn-doped Bi 2 Te 3 films were grown on vicinal GaAs (0 0 1) substrates by metal-organic chemical vapor deposition at 360 °C. Trimethylbismuth and diisopropyltellurium, which are alkyl-based, were used as the Bi and Te sources, respectively. Tetrakis(dimethylamino)tin (TDMASn) and tetramethyltin (TMSn) were used as the Sn precursors. Both Sn precursors successfully converted the carrier type of the Bi 2 Te 3 films from n- to p-type and achieved a high Seebeck coefficient. In the case of the Sn-doped Bi 2 Te 3 films with TDMASn, however, the Sn concentration could not be monotonically controlled by the amount of the precursor, and even the hole concentration was almost invariant despite the drastic increase in the amount of the precursor. In the case of the Sn-doped Bi 2 Te 3 films grown with TMSn, on the other hand, the Sn and hole concentrations could be easily controlled by the variation in the flow rate of the H 2 carrier gas. In particular, the hole concentration varied over a range of 1-5 × 10 19 /cm 3 in which a thermoelectric power factor can be maximized despite a very high vapor pressure of TMSn. The growth of high-quality Sn-doped Bi 2 Te 3 films was possible using all alkyl-based precursors. ",

keywords = "Bi Te films, Chemical vapor deposition, Epitaxial growth, Seebeck enhancement, Sn doping, p-type",

author = "Kim, {Kwang Chon} and Beomjin Kwon and Kim, {Hyun Jae} and Baek, {Seung Hyub} and Hyun, {Dow Bin} and Kim, {Seong Keun} and Kim, {Jin Sang}",

note = "Funding Information: We would like to acknowledge financial support from the R&D Convergence Program of the National Research Council of Science & Technology (NST) of the Republic of Korea . Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2015",

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doi = "10.1016/j.apsusc.2015.06.106",

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AU - Kim, Kwang Chon

AU - Kwon, Beomjin

AU - Kim, Hyun Jae

AU - Baek, Seung Hyub

AU - Hyun, Dow Bin

AU - Kim, Seong Keun

AU - Kim, Jin Sang

N1 - Funding Information: We would like to acknowledge financial support from the R&D Convergence Program of the National Research Council of Science & Technology (NST) of the Republic of Korea . Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2015/10/30

Y1 - 2015/10/30

N2 - Sn-doped Bi 2 Te 3 films were grown on vicinal GaAs (0 0 1) substrates by metal-organic chemical vapor deposition at 360 °C. Trimethylbismuth and diisopropyltellurium, which are alkyl-based, were used as the Bi and Te sources, respectively. Tetrakis(dimethylamino)tin (TDMASn) and tetramethyltin (TMSn) were used as the Sn precursors. Both Sn precursors successfully converted the carrier type of the Bi 2 Te 3 films from n- to p-type and achieved a high Seebeck coefficient. In the case of the Sn-doped Bi 2 Te 3 films with TDMASn, however, the Sn concentration could not be monotonically controlled by the amount of the precursor, and even the hole concentration was almost invariant despite the drastic increase in the amount of the precursor. In the case of the Sn-doped Bi 2 Te 3 films grown with TMSn, on the other hand, the Sn and hole concentrations could be easily controlled by the variation in the flow rate of the H 2 carrier gas. In particular, the hole concentration varied over a range of 1-5 × 10 19 /cm 3 in which a thermoelectric power factor can be maximized despite a very high vapor pressure of TMSn. The growth of high-quality Sn-doped Bi 2 Te 3 films was possible using all alkyl-based precursors.

AB - Sn-doped Bi 2 Te 3 films were grown on vicinal GaAs (0 0 1) substrates by metal-organic chemical vapor deposition at 360 °C. Trimethylbismuth and diisopropyltellurium, which are alkyl-based, were used as the Bi and Te sources, respectively. Tetrakis(dimethylamino)tin (TDMASn) and tetramethyltin (TMSn) were used as the Sn precursors. Both Sn precursors successfully converted the carrier type of the Bi 2 Te 3 films from n- to p-type and achieved a high Seebeck coefficient. In the case of the Sn-doped Bi 2 Te 3 films with TDMASn, however, the Sn concentration could not be monotonically controlled by the amount of the precursor, and even the hole concentration was almost invariant despite the drastic increase in the amount of the precursor. In the case of the Sn-doped Bi 2 Te 3 films grown with TMSn, on the other hand, the Sn and hole concentrations could be easily controlled by the variation in the flow rate of the H 2 carrier gas. In particular, the hole concentration varied over a range of 1-5 × 10 19 /cm 3 in which a thermoelectric power factor can be maximized despite a very high vapor pressure of TMSn. The growth of high-quality Sn-doped Bi 2 Te 3 films was possible using all alkyl-based precursors.

KW - Bi Te films

KW - Chemical vapor deposition

KW - Epitaxial growth

KW - Seebeck enhancement

KW - Sn doping

KW - p-type

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