Sn-based group-IV semiconductors on Si: New infrared materials and new templates for mismatched epitaxy

John Tolle, Radek Roucka, Vijay D'Costa, Jose Menendez, Andrew Chizmeshya, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

We report growth and properties of GeSn and SiGeSn alloys on Si (100). These materials are prepared using a novel CVD approach based on reactions of Si-Ge hydrides and SnD4. High quality GeSn films with Sn contents up to 20%, and strain free microstructures have been obtained. The lattice mismatch between the films and Si is relieved by Lomer edge dislocations located at the interface. This material is of interest due to the predicted cross-over to a direct gap semiconductor for moderate Sn concentrations. We find that the direct band gap, and, consequently, the main absorption edge, shifts monotonically to lower energies as the Sn concentration is increased. The compositional dependence of the direct band gap shows a strong bowing, such that the direct band gap is reduced to 0.4 eV (from 0.8 eV for pure Ge) for a concentration of 14% Sn. The ternary SiGeSn alloy has been grown for the first time on GeSn buffer layers. This material opens up entirely new opportunities for strain and band gap engineering using group-IV materials via decoupling of strain and composition. Our SiGeSn layers have lattice constants above and below that of pure Ge, and depending on the thickness and composition of the underlying buffer layer they can be grown relaxed, with compressive, or with tensile strain. In addition to acting as a buffer layer for the growth of SiGeSn, we have found that GeSn can act as a template for the subsequent growth of a variety of materials, including III-V semiconductors.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages579-584
Number of pages6
Volume891
StatePublished - 2006
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 1 2005

Other

Other2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/1/05

Fingerprint

Epitaxial growth
Semiconductor materials
Infrared radiation
Energy gap
Buffer layers
Bending (forming)
Edge dislocations
Lattice mismatch
Ternary alloys
Tensile strain
Chemical analysis
Hydrides
Lattice constants
Chemical vapor deposition
Microstructure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Tolle, J., Roucka, R., D'Costa, V., Menendez, J., Chizmeshya, A., & Kouvetakis, J. (2006). Sn-based group-IV semiconductors on Si: New infrared materials and new templates for mismatched epitaxy. In Materials Research Society Symposium Proceedings (Vol. 891, pp. 579-584)

Sn-based group-IV semiconductors on Si : New infrared materials and new templates for mismatched epitaxy. / Tolle, John; Roucka, Radek; D'Costa, Vijay; Menendez, Jose; Chizmeshya, Andrew; Kouvetakis, John.

Materials Research Society Symposium Proceedings. Vol. 891 2006. p. 579-584.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tolle, J, Roucka, R, D'Costa, V, Menendez, J, Chizmeshya, A & Kouvetakis, J 2006, Sn-based group-IV semiconductors on Si: New infrared materials and new templates for mismatched epitaxy. in Materials Research Society Symposium Proceedings. vol. 891, pp. 579-584, 2005 MRS Fall Meeting, Boston, MA, United States, 11/28/05.
Tolle J, Roucka R, D'Costa V, Menendez J, Chizmeshya A, Kouvetakis J. Sn-based group-IV semiconductors on Si: New infrared materials and new templates for mismatched epitaxy. In Materials Research Society Symposium Proceedings. Vol. 891. 2006. p. 579-584
Tolle, John ; Roucka, Radek ; D'Costa, Vijay ; Menendez, Jose ; Chizmeshya, Andrew ; Kouvetakis, John. / Sn-based group-IV semiconductors on Si : New infrared materials and new templates for mismatched epitaxy. Materials Research Society Symposium Proceedings. Vol. 891 2006. pp. 579-584
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AB - We report growth and properties of GeSn and SiGeSn alloys on Si (100). These materials are prepared using a novel CVD approach based on reactions of Si-Ge hydrides and SnD4. High quality GeSn films with Sn contents up to 20%, and strain free microstructures have been obtained. The lattice mismatch between the films and Si is relieved by Lomer edge dislocations located at the interface. This material is of interest due to the predicted cross-over to a direct gap semiconductor for moderate Sn concentrations. We find that the direct band gap, and, consequently, the main absorption edge, shifts monotonically to lower energies as the Sn concentration is increased. The compositional dependence of the direct band gap shows a strong bowing, such that the direct band gap is reduced to 0.4 eV (from 0.8 eV for pure Ge) for a concentration of 14% Sn. The ternary SiGeSn alloy has been grown for the first time on GeSn buffer layers. This material opens up entirely new opportunities for strain and band gap engineering using group-IV materials via decoupling of strain and composition. Our SiGeSn layers have lattice constants above and below that of pure Ge, and depending on the thickness and composition of the underlying buffer layer they can be grown relaxed, with compressive, or with tensile strain. In addition to acting as a buffer layer for the growth of SiGeSn, we have found that GeSn can act as a template for the subsequent growth of a variety of materials, including III-V semiconductors.

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