Smooth quantum hydrodynamic model vs. NEMO simulation of resonant tunneling diodes

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The smooth quantum hydrodynamic model is an extension of the classical hydrodynamic model for semiconductor devices which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the current-voltage curves of resonant tunneling diodes are presented which exhibit negative differential resistance - the experimental signal for quantum resonance effects - and are compared with the experimentally verified current-voltage curves predicted by the simulator NEMO, which uses a non-equilibrium Green function method.

Original languageEnglish (US)
Pages (from-to)95-102
Number of pages8
JournalJournal of Computational Electronics
Volume3
Issue number2
DOIs
StatePublished - Apr 2005

Fingerprint

Quantum Hydrodynamics
Resonant tunneling diodes
resonant tunneling diodes
Hydrodynamic Model
Semiconductor Devices
Diode
Hydrodynamics
Voltage
hydrodynamics
Semiconductor devices
semiconductor devices
Heterojunction
Curve
Non-equilibrium
Green's function
Discontinuity
Simulation
Simulation Model
Simulator
simulation

Keywords

  • NEMO
  • Quantum hydrodynamic model
  • Resonant tunneling diode

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

Smooth quantum hydrodynamic model vs. NEMO simulation of resonant tunneling diodes. / Gardner, Carl; Klimeck, Gerhard; Ringhofer, Christian.

In: Journal of Computational Electronics, Vol. 3, No. 2, 04.2005, p. 95-102.

Research output: Contribution to journalArticle

@article{5c3da455476443fe850637f03d0a48e2,
title = "Smooth quantum hydrodynamic model vs. NEMO simulation of resonant tunneling diodes",
abstract = "The smooth quantum hydrodynamic model is an extension of the classical hydrodynamic model for semiconductor devices which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the current-voltage curves of resonant tunneling diodes are presented which exhibit negative differential resistance - the experimental signal for quantum resonance effects - and are compared with the experimentally verified current-voltage curves predicted by the simulator NEMO, which uses a non-equilibrium Green function method.",
keywords = "NEMO, Quantum hydrodynamic model, Resonant tunneling diode",
author = "Carl Gardner and Gerhard Klimeck and Christian Ringhofer",
year = "2005",
month = "4",
doi = "10.1007/s10825-004-0314-x",
language = "English (US)",
volume = "3",
pages = "95--102",
journal = "Journal of Computational Electronics",
issn = "1569-8025",
publisher = "Springer Netherlands",
number = "2",

}

TY - JOUR

T1 - Smooth quantum hydrodynamic model vs. NEMO simulation of resonant tunneling diodes

AU - Gardner, Carl

AU - Klimeck, Gerhard

AU - Ringhofer, Christian

PY - 2005/4

Y1 - 2005/4

N2 - The smooth quantum hydrodynamic model is an extension of the classical hydrodynamic model for semiconductor devices which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the current-voltage curves of resonant tunneling diodes are presented which exhibit negative differential resistance - the experimental signal for quantum resonance effects - and are compared with the experimentally verified current-voltage curves predicted by the simulator NEMO, which uses a non-equilibrium Green function method.

AB - The smooth quantum hydrodynamic model is an extension of the classical hydrodynamic model for semiconductor devices which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the current-voltage curves of resonant tunneling diodes are presented which exhibit negative differential resistance - the experimental signal for quantum resonance effects - and are compared with the experimentally verified current-voltage curves predicted by the simulator NEMO, which uses a non-equilibrium Green function method.

KW - NEMO

KW - Quantum hydrodynamic model

KW - Resonant tunneling diode

UR - http://www.scopus.com/inward/record.url?scp=20544456112&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20544456112&partnerID=8YFLogxK

U2 - 10.1007/s10825-004-0314-x

DO - 10.1007/s10825-004-0314-x

M3 - Article

AN - SCOPUS:20544456112

VL - 3

SP - 95

EP - 102

JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

SN - 1569-8025

IS - 2

ER -