Smooth quantum hydrodynamic model simulation of the resonant tunneling diode

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance (NDR) when compared to simulations using the original O(i(Latin small letter h with stroke sign)2) QHD model. At both 300 K and 77 K, the smooth QHD simulations predict significant NDR even when the original QHD model simulations predict no NDR.

Original languageEnglish (US)
Pages (from-to)143-146
Number of pages4
JournalVLSI Design
Volume8
Issue number1-4
DOIs
StatePublished - 1998

Keywords

  • Quantum hydrodynamic model
  • Resonant tunneling diode

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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