Smooth quantum hydrodynamic model simulation of the resonant tunneling diode

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Abstract

Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance (NDR) when compared to simulations using the original O(i(Latin small letter h with stroke sign) 2) QHD model. At both 300 K and 77 K, the smooth QHD simulations predict significant NDR even when the original QHD model simulations predict no NDR.

Original languageEnglish (US)
Pages (from-to)143-146
Number of pages4
JournalVLSI Design
Volume8
Issue number1-4
Publication statusPublished - 1998

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Keywords

  • Quantum hydrodynamic model
  • Resonant tunneling diode

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

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