Abstract
Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance (NDR) when compared to simulations using the original O(i(Latin small letter h with stroke sign)2) QHD model. At both 300 K and 77 K, the smooth QHD simulations predict significant NDR even when the original QHD model simulations predict no NDR.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 143-146 |
| Number of pages | 4 |
| Journal | VLSI Design |
| Volume | 8 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - 1998 |
Keywords
- Quantum hydrodynamic model
- Resonant tunneling diode
ASJC Scopus subject areas
- Hardware and Architecture
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering