TY - GEN
T1 - Smart Self-driving Gate Driver for Fast Switching and Crosstalk Suppression of SiC MOSFETs
AU - Liu, Chunhui
AU - Zhang, Zhengda
AU - Liu, Yifu
AU - Si, Yunpeng
AU - Lei, Qin
PY - 2019/9
Y1 - 2019/9
N2 - Wide band gap device, like SiC and GaN, have high switching speed potential. However, the actual speed in practical application is limited by the gate loop parasitic and the interaction between high side switch and low side switch in a single phase-leg configuration, known as crosstalk. This paper proposes an isolated voltage source gate driver with crosstalk suppression capability to take full advantage of the inherent high switching speed ability of WBG device. By applying variable gate voltage through the auxiliary circuit, the crosstalk problem can be mitigated. Using the original Vgs voltage as auxiliary circuit driving signal, the gate driver dose not introduce any control signal which avoids the additional signal/power isolation and makes the auxiliary circuit very easy to be implemented on the existing commercial gate driver. LTSPICE simulation and experiment results based on 1.2kV Wolfspeed SiC MOSFET are shown in this paper to verify the proposed gate driver.
AB - Wide band gap device, like SiC and GaN, have high switching speed potential. However, the actual speed in practical application is limited by the gate loop parasitic and the interaction between high side switch and low side switch in a single phase-leg configuration, known as crosstalk. This paper proposes an isolated voltage source gate driver with crosstalk suppression capability to take full advantage of the inherent high switching speed ability of WBG device. By applying variable gate voltage through the auxiliary circuit, the crosstalk problem can be mitigated. Using the original Vgs voltage as auxiliary circuit driving signal, the gate driver dose not introduce any control signal which avoids the additional signal/power isolation and makes the auxiliary circuit very easy to be implemented on the existing commercial gate driver. LTSPICE simulation and experiment results based on 1.2kV Wolfspeed SiC MOSFET are shown in this paper to verify the proposed gate driver.
KW - Crosstalk suppression
KW - Mega-Hertz frequency
KW - SiC MOSFET
KW - Smart Gate Driver
UR - http://www.scopus.com/inward/record.url?scp=85076764194&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85076764194&partnerID=8YFLogxK
U2 - 10.1109/ECCE.2019.8912572
DO - 10.1109/ECCE.2019.8912572
M3 - Conference contribution
AN - SCOPUS:85076764194
T3 - 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019
SP - 6655
EP - 6660
BT - 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2019
Y2 - 29 September 2019 through 3 October 2019
ER -