Smart current source gate driver for fast switching and cross-talk suppression of SiC MOSFET

Chunhui Liu, Qin Lei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Wide band gap device, like SiC and GaN, have high switching speed potential. However, the actual speed in practical use is limited by the gate loop parasitic and the interaction between high side switch and low side switch in a single phase-leg configuration known as cross-talk. This paper proposes an isolated current source gate driver (CSGD) with cross-talk suppression capability to take full advantage of the inherent high switching speed ability of WBG device. The current source is better than voltage source since it can ignore the gate loop parasitic inductance. And by applying variable gate voltage, the cross-talk problem can be mitigated. LTspice simulation and experiment results based on 1.2kV Wolfspeed SiC MOSFET are shown in this paper to verify the proposed gate driver.

Original languageEnglish (US)
Title of host publication34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2734-2739
Number of pages6
ISBN (Electronic)9781538683309
DOIs
StatePublished - May 24 2019
Event34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 - Anaheim, United States
Duration: Mar 17 2019Mar 21 2019

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Volume2019-March

Conference

Conference34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
CountryUnited States
CityAnaheim
Period3/17/193/21/19

Keywords

  • Cross-talk suppression
  • Current source gate driver
  • SiC MOSFET
  • Variable voltage gate driver

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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