TY - GEN
T1 - Notice of Removal
T2 - 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
AU - Liu, Chunhui
AU - Lei, Qin
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/5/24
Y1 - 2019/5/24
N2 - Wide band gap device, like SiC and GaN, have high switching speed potential. However, the actual speed in practical use is limited by the gate loop parasitic and the interaction between high side switch and low side switch in a single phase-leg configuration known as cross-talk. This paper proposes an isolated current source gate driver (CSGD) with cross-talk suppression capability to take full advantage of the inherent high switching speed ability of WBG device. The current source is better than voltage source since it can ignore the gate loop parasitic inductance. And by applying variable gate voltage, the cross-talk problem can be mitigated. LTspice simulation and experiment results based on 1.2kV Wolfspeed SiC MOSFET are shown in this paper to verify the proposed gate driver.
AB - Wide band gap device, like SiC and GaN, have high switching speed potential. However, the actual speed in practical use is limited by the gate loop parasitic and the interaction between high side switch and low side switch in a single phase-leg configuration known as cross-talk. This paper proposes an isolated current source gate driver (CSGD) with cross-talk suppression capability to take full advantage of the inherent high switching speed ability of WBG device. The current source is better than voltage source since it can ignore the gate loop parasitic inductance. And by applying variable gate voltage, the cross-talk problem can be mitigated. LTspice simulation and experiment results based on 1.2kV Wolfspeed SiC MOSFET are shown in this paper to verify the proposed gate driver.
KW - Cross-talk suppression
KW - Current source gate driver
KW - SiC MOSFET
KW - Variable voltage gate driver
UR - http://www.scopus.com/inward/record.url?scp=85067108562&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85067108562&partnerID=8YFLogxK
U2 - 10.1109/APEC.2019.8721945
DO - 10.1109/APEC.2019.8721945
M3 - Conference contribution
AN - SCOPUS:85067108562
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 2734
EP - 2739
BT - 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 17 March 2019 through 21 March 2019
ER -