Size stabilization of arsenic precipitates in nonstoichiometric GaAs-based compounds

C. Y. Hung; J. S. Harris; A. F. Marshall; R. A. Kiehl

doi:10.1063/1.124553

Size stabilization of arsenic precipitates in nonstoichiometric GaAs-based compounds

C. Y. Hung, J. S. Harris, A. F. Marshall, R. A. Kiehl

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A narrowing of the size distribution of arsenic precipitates in nonstoichiometric GaAs-based compounds is observed during annealing for precipitates in the small size regime of a few nanometers. This improvement in size uniformity is in marked contrast to what is observed for larger precipitates, which coarsen with a widening distribution similar to that of classical Ostwald ripening. Inverse coarsening caused by an elastic interaction between small precipitates due to coherency strain is a possible mechanism for this interesting and potentially useful behavior.

Original language	English (US)
Pages (from-to)	917-919
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	7
DOIs	https://doi.org/10.1063/1.124553
State	Published - Aug 16 1999
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "A narrowing of the size distribution of arsenic precipitates in nonstoichiometric GaAs-based compounds is observed during annealing for precipitates in the small size regime of a few nanometers. This improvement in size uniformity is in marked contrast to what is observed for larger precipitates, which coarsen with a widening distribution similar to that of classical Ostwald ripening. Inverse coarsening caused by an elastic interaction between small precipitates due to coherency strain is a possible mechanism for this interesting and potentially useful behavior.",

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AU - Hung, C. Y.

AU - Harris, J. S.

AU - Marshall, A. F.

AU - Kiehl, R. A.

PY - 1999/8/16

Y1 - 1999/8/16

N2 - A narrowing of the size distribution of arsenic precipitates in nonstoichiometric GaAs-based compounds is observed during annealing for precipitates in the small size regime of a few nanometers. This improvement in size uniformity is in marked contrast to what is observed for larger precipitates, which coarsen with a widening distribution similar to that of classical Ostwald ripening. Inverse coarsening caused by an elastic interaction between small precipitates due to coherency strain is a possible mechanism for this interesting and potentially useful behavior.

AB - A narrowing of the size distribution of arsenic precipitates in nonstoichiometric GaAs-based compounds is observed during annealing for precipitates in the small size regime of a few nanometers. This improvement in size uniformity is in marked contrast to what is observed for larger precipitates, which coarsen with a widening distribution similar to that of classical Ostwald ripening. Inverse coarsening caused by an elastic interaction between small precipitates due to coherency strain is a possible mechanism for this interesting and potentially useful behavior.

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JF - Applied Physics Letters

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Size stabilization of arsenic precipitates in nonstoichiometric GaAs-based compounds

Abstract

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