Size reduction of a semiconductor nanowire laser by using metal coating

A. V. Maslov, Cun-Zheng Ning

Research output: Chapter in Book/Report/Conference proceedingConference contribution

71 Scopus citations

Abstract

We explore the possibility of coating semiconductor nanowires with metal (Ag) to reduce the size of nanowire lasers operating at photon energies around 0.8-2 eV. Our results show that the material gain of a typical III-V semiconductor in nanowire may be sufficient to compensate Joule losses of such metal as Ag. The most promising mode to achieve lasing is TM01 near its cutoff. To calculate the guiding properties of metal coated nanowires, we developed a finite-difference discretization approach, the details of which we also present. This approach allowed us to treat accurately the large index contrast of the nanowire/metal interface and to include nonperturbatively the imaginary parts of dielectric constants of the semiconductor core and metal coating.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6468
DOIs
Publication statusPublished - 2007
EventPhysics and Simulation of Optoelectronic Devices XV - San Jose, CA, United States
Duration: Jan 22 2007Jan 25 2007

Other

OtherPhysics and Simulation of Optoelectronic Devices XV
CountryUnited States
CitySan Jose, CA
Period1/22/071/25/07

    Fingerprint

Keywords

  • Finite-difference discretization
  • Lasers
  • Nanowires
  • Plasmons
  • Waveguide dispersion

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Maslov, A. V., & Ning, C-Z. (2007). Size reduction of a semiconductor nanowire laser by using metal coating. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6468). [64680I] https://doi.org/10.1117/12.723786