Size-mismatch disorder at the surface of semiconductors

Normand Mousseau, Michael Thorpe

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We study the effects of size-mismatch disorder on the surface relaxation of semiconductor solid solutions. Assuming a Kirkwood-type potential, we obtain an analytic solution for the nearest-neighbor distances and their distributions as a function of the distance from the surface as well as the displacements at the (111) and (100) surfaces. This solution is also valid for bond-mismatch disorder and is checked against computer simulations for two-dimensional triangular networks along (10) and (11) surfaces. Predictions are made for the topography of the (111) surface of a SiGe alloy.

Original languageEnglish (US)
Pages (from-to)2660-2667
Number of pages8
JournalPhysical Review B
Volume52
Issue number4
DOIs
StatePublished - 1995
Externally publishedYes

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disorders
Semiconductor materials
Surface relaxation
Topography
Solid solutions
topography
solid solutions
computerized simulation
Computer simulation
predictions
Si-Ge alloys

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Size-mismatch disorder at the surface of semiconductors. / Mousseau, Normand; Thorpe, Michael.

In: Physical Review B, Vol. 52, No. 4, 1995, p. 2660-2667.

Research output: Contribution to journalArticle

Mousseau, Normand ; Thorpe, Michael. / Size-mismatch disorder at the surface of semiconductors. In: Physical Review B. 1995 ; Vol. 52, No. 4. pp. 2660-2667.
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