Size distribution and optical properties of self-assembled Ge on Si

L. Vescan, Michael Goryll, T. Stoica, P. Gartner, K. Grimm, O. Chretien, E. Mateeva, C. Dieker, B. Holländer

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The distribution of Ge islands is analyzed in order to understand their optical behaviour. The Ge islands described in this paper were deposited by low-pressure chemical vapour deposition at relatively high temperature (700 °C), therefore the diffusion length of adatoms is high (approximately 100 μm) and thus, not the limiting factor for nucleation. By changing the deposition time and the coverage, square-based pyramids, domes and relaxed domes are nucleated. Mainly domes emit light, the emission being in the wavelength range 1.38-1.55 μm. When pyramids or relaxed domes are present, the photoluminescence broadens and decreases in intensity. The electroluminescence of vertically correlated islands increases with the number of layers, i.e. with the number of islands. The nucleation of islands on patterned (001) Si is changed when the deposition is performed on Si mesas with high index facets. The size distribution becomes narrower when the mesa size is decreased. An intermixing of up to 40% Si in the 2D layer was determined from photoluminescence data. PIN diodes fabricated on patterned wafers show an area-dependent electroluminecence related to a different microstructure of islands on large and small mesas. Finally, the lateral ordering on {hkl} facets is discussed.

Original languageEnglish (US)
Pages (from-to)423-432
Number of pages10
JournalApplied Physics A: Materials Science and Processing
Volume71
Issue number4
StatePublished - Oct 2000
Externally publishedYes

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distribution (property)
Domes
Optical properties
domes
optical properties
mesas
Photoluminescence
Nucleation
pyramids
Low pressure chemical vapor deposition
Adatoms
flat surfaces
Electroluminescence
nucleation
photoluminescence
Diodes
diffusion length
electroluminescence
Wavelength
adatoms

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Vescan, L., Goryll, M., Stoica, T., Gartner, P., Grimm, K., Chretien, O., ... Holländer, B. (2000). Size distribution and optical properties of self-assembled Ge on Si. Applied Physics A: Materials Science and Processing, 71(4), 423-432.

Size distribution and optical properties of self-assembled Ge on Si. / Vescan, L.; Goryll, Michael; Stoica, T.; Gartner, P.; Grimm, K.; Chretien, O.; Mateeva, E.; Dieker, C.; Holländer, B.

In: Applied Physics A: Materials Science and Processing, Vol. 71, No. 4, 10.2000, p. 423-432.

Research output: Contribution to journalArticle

Vescan, L, Goryll, M, Stoica, T, Gartner, P, Grimm, K, Chretien, O, Mateeva, E, Dieker, C & Holländer, B 2000, 'Size distribution and optical properties of self-assembled Ge on Si', Applied Physics A: Materials Science and Processing, vol. 71, no. 4, pp. 423-432.
Vescan, L. ; Goryll, Michael ; Stoica, T. ; Gartner, P. ; Grimm, K. ; Chretien, O. ; Mateeva, E. ; Dieker, C. ; Holländer, B. / Size distribution and optical properties of self-assembled Ge on Si. In: Applied Physics A: Materials Science and Processing. 2000 ; Vol. 71, No. 4. pp. 423-432.
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