Size distribution and electroluminescence of self-assembled Ge dots

L. Vescan, T. Stoica, O. Chretien, M. Goryll, E. Mateeva, A. Mück

Research output: Contribution to journalArticle

56 Scopus citations

Abstract

In this article we study the electroluminescence of p-i-n diode structures with Ge dots consisting of coherent three-dimensional small (pyramids) and larger (dome) islands. The Ge dots are formed through strain-induced islanding. The diode structures, including one layer with Ge dots, were deposited on Si mesas with variable areas in order to study the influence of limited area deposition on self-assembling. It was observed that the reduction of deposited area improves island uniformity. The combined analysis of island distribution and electroluminescence spectra has lead to the conclusion that domes in small diodes have a smaller Si content or are less relaxed than domes in larger diodes. The diodes are found to emit up to room temperature near the optical communication wavelength of 1.3 microns.

Original languageEnglish (US)
Pages (from-to)7275-7282
Number of pages8
JournalJournal of Applied Physics
Volume87
Issue number10
DOIs
StatePublished - May 15 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Size distribution and electroluminescence of self-assembled Ge dots'. Together they form a unique fingerprint.

  • Cite this

    Vescan, L., Stoica, T., Chretien, O., Goryll, M., Mateeva, E., & Mück, A. (2000). Size distribution and electroluminescence of self-assembled Ge dots. Journal of Applied Physics, 87(10), 7275-7282. https://doi.org/10.1063/1.372980