@article{08c8f512e6494c01a9d9688210328b38,
title = "Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction",
abstract = "Laser-assisted phosphorus doping is demonstrated on ultrathin transition-metal dichalcogenides (TMDCs) including n-type MoS2 and p-type WSe2. Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser-assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.",
keywords = "2D materials, field-effect transistors, laser-assisted doping, site selective, transition metal dichalcogenide",
author = "Eunpa Kim and Changhyun Ko and Kyunghoon Kim and Yabin Chen and Joonki Suh and Ryu, {Sang Gil} and Kedi Wu and Xiuqing Meng and Aslihan Suslu and Sefaattin Tongay and Junqiao Wu and Grigoropoulos, {Costas P.}",
note = "Funding Information: C.K. and K.K. contributed equally to this work. The authors thank Taegyun Park for his assistance in sample preparation. Support from the US Air Force Office of Scientific Research AFOSR/AOARD under grant FA2386-13-4123 is gratefully acknowledged. This work was also partially supported by the National Science Foundation under Grant No. DMR-1306601. Nano-Auger experiment at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The laser-induced doping was conducted on the LACVD apparatus in the UC Berkeley Marvell Nanofabrication Laboratory. Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",
year = "2016",
month = jan,
day = "13",
doi = "10.1002/adma.201503945",
language = "English (US)",
volume = "28",
pages = "341--346",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "2",
}