Si3N4/Si/In0.05Ga0.95As/n-GaAs metal-insulator-semiconductor devices

Dae Gyu Park, Ding Li, Meng Tao, Zhifang Fan, Andrei E. Botchkarev, S. Noor Mohammad, Hadis Morkoç

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report a novel metal-insulator-semiconductor (MIS) structure exhibiting a pseudomorphic In0.05Ga0.95As layer on GaAs with interface state densities in the low 1011 eV-1 cm-2. The structure was grown by a combination of molecular beam epitaxy and chemical vapor deposition methods. The hysteresis and frequency dispersion of the MIS capacitor were lower than 100 mV, some of them as low as 30 mV under a field swing of about ±1.3 MV/cm. The 150-Å-thick In0.05Ga0.95As channel between Si and GaAs is found to bring about a change in the minority carrier recombination behavior of the GaAs channel, in the same way as done by In0.53Ga0.47As channel MIS structures. Self-aligned gate depletion mode In0.05Ga0.95As metal-insulator-semiconductor field-effect transistors having 3 μm gate lengths exhibited field-effect bulk mobility of 1400 cm2/V s and transconductances of about 170 mS/mm.

Original languageEnglish (US)
Pages (from-to)516-523
Number of pages8
JournalJournal of Applied Physics
Volume81
Issue number1
StatePublished - Jan 1 1997
Externally publishedYes

Fingerprint

MIS (semiconductors)
semiconductor devices
transconductance
minority carriers
capacitors
depletion
molecular beam epitaxy
field effect transistors
hysteresis
vapor deposition

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Park, D. G., Li, D., Tao, M., Fan, Z., Botchkarev, A. E., Mohammad, S. N., & Morkoç, H. (1997). Si3N4/Si/In0.05Ga0.95As/n-GaAs metal-insulator-semiconductor devices. Journal of Applied Physics, 81(1), 516-523.

Si3N4/Si/In0.05Ga0.95As/n-GaAs metal-insulator-semiconductor devices. / Park, Dae Gyu; Li, Ding; Tao, Meng; Fan, Zhifang; Botchkarev, Andrei E.; Mohammad, S. Noor; Morkoç, Hadis.

In: Journal of Applied Physics, Vol. 81, No. 1, 01.01.1997, p. 516-523.

Research output: Contribution to journalArticle

Park, DG, Li, D, Tao, M, Fan, Z, Botchkarev, AE, Mohammad, SN & Morkoç, H 1997, 'Si3N4/Si/In0.05Ga0.95As/n-GaAs metal-insulator-semiconductor devices', Journal of Applied Physics, vol. 81, no. 1, pp. 516-523.
Park DG, Li D, Tao M, Fan Z, Botchkarev AE, Mohammad SN et al. Si3N4/Si/In0.05Ga0.95As/n-GaAs metal-insulator-semiconductor devices. Journal of Applied Physics. 1997 Jan 1;81(1):516-523.
Park, Dae Gyu ; Li, Ding ; Tao, Meng ; Fan, Zhifang ; Botchkarev, Andrei E. ; Mohammad, S. Noor ; Morkoç, Hadis. / Si3N4/Si/In0.05Ga0.95As/n-GaAs metal-insulator-semiconductor devices. In: Journal of Applied Physics. 1997 ; Vol. 81, No. 1. pp. 516-523.
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