Si/Sige modulation doped structures by gas source molecular beam epitaxy using arsenic as a donor

A. Matsumura, R. S. Prasad, T. J. Thornton, J. M. Fernandez, M. H. Xie, X. Zhang, J. Zhang, B. A. Joyce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have grown Si/SiGe modulation doped quantum wells by gas source molecular beam epitaxy using, for the first time, arsenic as an n-type dopant. The layers are characterised by magnetotransport measurements and SIMS analysis. The latter shows an arsenic concentration in excess of 1019 cm¿3 along with strong surface segregation.

Original languageEnglish (US)
Title of host publicationEuropean Solid-State Device Research Conference
EditorsPeter Ashburn, Chris Hill
PublisherIEEE Computer Society
Pages741-744
Number of pages4
ISBN (Electronic)2863321579
StatePublished - Jan 1 1994
Externally publishedYes
Event24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom
Duration: Sep 11 1994Sep 15 1994

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other24th European Solid State Device Research Conference, ESSDERC 1994
CountryUnited Kingdom
CityEdinburgh
Period9/11/949/15/94

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Matsumura, A., Prasad, R. S., Thornton, T. J., Fernandez, J. M., Xie, M. H., Zhang, X., Zhang, J., & Joyce, B. A. (1994). Si/Sige modulation doped structures by gas source molecular beam epitaxy using arsenic as a donor. In P. Ashburn, & C. Hill (Eds.), European Solid-State Device Research Conference (pp. 741-744). [5435821] (European Solid-State Device Research Conference). IEEE Computer Society.