Measurements of the DC characteristics of a negative inverting, voltage-following current mirror are presented. The circuit design uses prototype n-depletion mode, modulation doped field effect transistors employing Si:SiGe heterojunction technology and is based on recently established circuit design techniques for GaAs MESFET technology. The results show a quasi-linear response with gate voltage swings (Vgs) of ±0.5V. Increases in the achievable range of Vgs are anticipated through changes in material growth and device processing, and also through enhancement of the circuit design.
ASJC Scopus subject areas
- Electrical and Electronic Engineering