Si:SiGe MODFET current mirror

K. Fobelets, W. Jeamsaksiri, J. Hampson, C. Toumazou, Trevor Thornton

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Measurements of the DC characteristics of a negative inverting, voltage-following current mirror are presented. The circuit design uses prototype n-depletion mode, modulation doped field effect transistors employing Si:SiGe heterojunction technology and is based on recently established circuit design techniques for GaAs MESFET technology. The results show a quasi-linear response with gate voltage swings (Vgs) of ±0.5V. Increases in the achievable range of Vgs are anticipated through changes in material growth and device processing, and also through enhancement of the circuit design.

Original languageEnglish (US)
Pages (from-to)2076-2077
Number of pages2
JournalElectronics Letters
Volume34
Issue number22
DOIs
StatePublished - Oct 29 1998

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Fobelets, K., Jeamsaksiri, W., Hampson, J., Toumazou, C., & Thornton, T. (1998). Si:SiGe MODFET current mirror. Electronics Letters, 34(22), 2076-2077. https://doi.org/10.1049/el:19981494