Si:SiGe MODFET current mirror

K. Fobelets; W. Jeamsaksiri; J. Hampson; C. Toumazou; Trevor Thornton

doi:10.1049/el:19981494

Si:SiGe MODFET current mirror

K. Fobelets, W. Jeamsaksiri, J. Hampson, C. Toumazou, Trevor Thornton

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Measurements of the DC characteristics of a negative inverting, voltage-following current mirror are presented. The circuit design uses prototype n-depletion mode, modulation doped field effect transistors employing Si:SiGe heterojunction technology and is based on recently established circuit design techniques for GaAs MESFET technology. The results show a quasi-linear response with gate voltage swings (V_gs) of ±0.5V. Increases in the achievable range of Vgs are anticipated through changes in material growth and device processing, and also through enhancement of the circuit design.

Original language	English (US)
Pages (from-to)	2076-2077
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	22
DOIs	https://doi.org/10.1049/el:19981494
State	Published - Oct 29 1998

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19981494

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abstract = "Measurements of the DC characteristics of a negative inverting, voltage-following current mirror are presented. The circuit design uses prototype n-depletion mode, modulation doped field effect transistors employing Si:SiGe heterojunction technology and is based on recently established circuit design techniques for GaAs MESFET technology. The results show a quasi-linear response with gate voltage swings (Vgs) of ±0.5V. Increases in the achievable range of Vgs are anticipated through changes in material growth and device processing, and also through enhancement of the circuit design.",

author = "K. Fobelets and W. Jeamsaksiri and J. Hampson and C. Toumazou and Trevor Thornton",

year = "1998",

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journal = "Electronics Letters",

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T1 - Si:SiGe MODFET current mirror

AU - Fobelets, K.

AU - Jeamsaksiri, W.

AU - Hampson, J.

AU - Toumazou, C.

AU - Thornton, Trevor

PY - 1998/10/29

Y1 - 1998/10/29

N2 - Measurements of the DC characteristics of a negative inverting, voltage-following current mirror are presented. The circuit design uses prototype n-depletion mode, modulation doped field effect transistors employing Si:SiGe heterojunction technology and is based on recently established circuit design techniques for GaAs MESFET technology. The results show a quasi-linear response with gate voltage swings (Vgs) of ±0.5V. Increases in the achievable range of Vgs are anticipated through changes in material growth and device processing, and also through enhancement of the circuit design.

AB - Measurements of the DC characteristics of a negative inverting, voltage-following current mirror are presented. The circuit design uses prototype n-depletion mode, modulation doped field effect transistors employing Si:SiGe heterojunction technology and is based on recently established circuit design techniques for GaAs MESFET technology. The results show a quasi-linear response with gate voltage swings (Vgs) of ±0.5V. Increases in the achievable range of Vgs are anticipated through changes in material growth and device processing, and also through enhancement of the circuit design.

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JF - Electronics Letters

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ER -

Si:SiGe MODFET current mirror

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