Si/SiC UHV direct wafer bonded interfazce structure

M. J. Kim, Hong Xu, R. J. Liu, M. J. Cox, Ray Carpenter

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Planar (001)Si/(0001) Si-terminated 6H-SiC interfaces were synthesized by UHV diffusion bonding of cleaned, on-axis and vicinal wafers at 1100°C for 5 hours, at 1 MPa pressure. The interfaces were crystalline up to their defining plane, without nanospectroscopically detectable impurities. The crack opening tests showed the interfaces were stronger than the Si substrates. Oxygen on the substrate surfaces resulted in silicon carbide on insulator (SiCOI) interface formation.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Volume587
StatePublished - 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Kim, M. J., Xu, H., Liu, R. J., Cox, M. J., & Carpenter, R. (2000). Si/SiC UHV direct wafer bonded interfazce structure. In Materials Research Society Symposium - Proceedings (Vol. 587)