Si/SiC UHV direct wafer bonded interface structure

M. J. Kim, Hong Xu, R. J. Liu, M. J. Cox, Ray Carpenter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Planar (001)Si/(0001) Si-terminated 6H-SiC interfaces were synthesized by UHV diffusion bonding of cleaned, on-axis and vicinal wafers at 1100 °C for 5 hours at 1 MPa pressure. The interfaces were crystalline up to their defining plane, without nanospectroscopically detectable impurities. The crack opening tests showed the interfaces were stronger than the Si substrates. Oxygen on the substrate surfaces resulted in silicon carbide on insulator (SiCOI) interface formation.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Volume587
StatePublished - 2000
EventSubstrate Engineering Paving the Way to Epitaxy - Boston, MA, USA
Duration: Nov 29 1999Dec 3 1999

Other

OtherSubstrate Engineering Paving the Way to Epitaxy
CityBoston, MA, USA
Period11/29/9912/3/99

Fingerprint

Diffusion bonding
Substrates
Silicon carbide
Impurities
Oxygen
Crystalline materials
Cracks
silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kim, M. J., Xu, H., Liu, R. J., Cox, M. J., & Carpenter, R. (2000). Si/SiC UHV direct wafer bonded interface structure. In Materials Research Society Symposium - Proceedings (Vol. 587). Materials Research Society.

Si/SiC UHV direct wafer bonded interface structure. / Kim, M. J.; Xu, Hong; Liu, R. J.; Cox, M. J.; Carpenter, Ray.

Materials Research Society Symposium - Proceedings. Vol. 587 Materials Research Society, 2000.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, MJ, Xu, H, Liu, RJ, Cox, MJ & Carpenter, R 2000, Si/SiC UHV direct wafer bonded interface structure. in Materials Research Society Symposium - Proceedings. vol. 587, Materials Research Society, Substrate Engineering Paving the Way to Epitaxy, Boston, MA, USA, 11/29/99.
Kim MJ, Xu H, Liu RJ, Cox MJ, Carpenter R. Si/SiC UHV direct wafer bonded interface structure. In Materials Research Society Symposium - Proceedings. Vol. 587. Materials Research Society. 2000
Kim, M. J. ; Xu, Hong ; Liu, R. J. ; Cox, M. J. ; Carpenter, Ray. / Si/SiC UHV direct wafer bonded interface structure. Materials Research Society Symposium - Proceedings. Vol. 587 Materials Research Society, 2000.
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