Si/SiC UHV direct wafer bonded interface structure

M. J. Kim; Hong Xu; R. J. Liu; M. J. Cox; Ray Carpenter

Si/SiC UHV direct wafer bonded interface structure

M. J. Kim, Hong Xu, R. J. Liu, M. J. Cox, Ray Carpenter

Chemical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Planar (001)Si/(0001) Si-terminated 6H-SiC interfaces were synthesized by UHV diffusion bonding of cleaned, on-axis and vicinal wafers at 1100 °C for 5 hours at 1 MPa pressure. The interfaces were crystalline up to their defining plane, without nanospectroscopically detectable impurities. The crack opening tests showed the interfaces were stronger than the Si substrates. Oxygen on the substrate surfaces resulted in silicon carbide on insulator (SiCOI) interface formation.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Volume	587
State	Published - 2000
Event	Substrate Engineering Paving the Way to Epitaxy - Boston, MA, USA Duration: Nov 29 1999 → Dec 3 1999

Other

Other	Substrate Engineering Paving the Way to Epitaxy
City	Boston, MA, USA
Period	11/29/99 → 12/3/99

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{0c8b7c984bf44ce29afc2a93086b7581,

title = "Si/SiC UHV direct wafer bonded interface structure",

abstract = "Planar (001)Si/(0001) Si-terminated 6H-SiC interfaces were synthesized by UHV diffusion bonding of cleaned, on-axis and vicinal wafers at 1100 °C for 5 hours at 1 MPa pressure. The interfaces were crystalline up to their defining plane, without nanospectroscopically detectable impurities. The crack opening tests showed the interfaces were stronger than the Si substrates. Oxygen on the substrate surfaces resulted in silicon carbide on insulator (SiCOI) interface formation.",

author = "Kim, {M. J.} and Hong Xu and Liu, {R. J.} and Cox, {M. J.} and Ray Carpenter",

year = "2000",

language = "English (US)",

volume = "587",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Substrate Engineering Paving the Way to Epitaxy ; Conference date: 29-11-1999 Through 03-12-1999",

}

TY - GEN

T1 - Si/SiC UHV direct wafer bonded interface structure

AU - Kim, M. J.

AU - Xu, Hong

AU - Liu, R. J.

AU - Cox, M. J.

AU - Carpenter, Ray

PY - 2000

Y1 - 2000

N2 - Planar (001)Si/(0001) Si-terminated 6H-SiC interfaces were synthesized by UHV diffusion bonding of cleaned, on-axis and vicinal wafers at 1100 °C for 5 hours at 1 MPa pressure. The interfaces were crystalline up to their defining plane, without nanospectroscopically detectable impurities. The crack opening tests showed the interfaces were stronger than the Si substrates. Oxygen on the substrate surfaces resulted in silicon carbide on insulator (SiCOI) interface formation.

AB - Planar (001)Si/(0001) Si-terminated 6H-SiC interfaces were synthesized by UHV diffusion bonding of cleaned, on-axis and vicinal wafers at 1100 °C for 5 hours at 1 MPa pressure. The interfaces were crystalline up to their defining plane, without nanospectroscopically detectable impurities. The crack opening tests showed the interfaces were stronger than the Si substrates. Oxygen on the substrate surfaces resulted in silicon carbide on insulator (SiCOI) interface formation.

UR - http://www.scopus.com/inward/record.url?scp=0034512362&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034512362&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0034512362

VL - 587

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Substrate Engineering Paving the Way to Epitaxy

Y2 - 29 November 1999 through 3 December 1999

ER -

Si/SiC UHV direct wafer bonded interface structure

Abstract

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ASJC Scopus subject areas

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