Si/SiC UHV direct wafer bonded interface structure

M. J. Kim, Hong Xu, R. J. Liu, M. J. Cox, Ray Carpenter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Planar (001)Si/(0001) Si-terminated 6H-SiC interfaces were synthesized by UHV diffusion bonding of cleaned, on-axis and vicinal wafers at 1100 °C for 5 hours at 1 MPa pressure. The interfaces were crystalline up to their defining plane, without nanospectroscopically detectable impurities. The crack opening tests showed the interfaces were stronger than the Si substrates. Oxygen on the substrate surfaces resulted in silicon carbide on insulator (SiCOI) interface formation.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Volume587
StatePublished - 2000
EventSubstrate Engineering Paving the Way to Epitaxy - Boston, MA, USA
Duration: Nov 29 1999Dec 3 1999

Other

OtherSubstrate Engineering Paving the Way to Epitaxy
CityBoston, MA, USA
Period11/29/9912/3/99

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Kim, M. J., Xu, H., Liu, R. J., Cox, M. J., & Carpenter, R. (2000). Si/SiC UHV direct wafer bonded interface structure. In Materials Research Society Symposium - Proceedings (Vol. 587). Materials Research Society.