Abstract

This paper reports a proposal and demonstration of a novel anti-reflection coating (ARC) using a dielectric material, such as SiO2, in conjunction with lattice-matched and conductive crystalline ZnSe for GaAs based solar cells. The application of such an ARC to GaAs single-junction solar cell is used for the feasibility study. The transfer matrix method is applied to calculate the reflectance as well as determine the optimal SiO2 and ZnSe layer thicknesses. The simulation results indicate that a minimum reflection loss of 1.5% is achievable when the SiO2 and ZnSe layer thicknesses are 91 nm and 49 nm, respectively. Test structures consisting of ZnSe and SiO2 layers were grown using molecular beam epitaxy and magnetron RF sputtering, respectively. The reflectance measurements of both samples showed 4.0% total reflection loss over the absorbed solar spectrum. This newly proposed ARC can also be used for multi-junction solar cells based on GaAs as well as other single- or multi-junction solar cells based on different substrates. The single-crystal ZnSe layer with proper doping can also be used for current spreading to further improve the overall solar cell efficiencies.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2105-2108
Number of pages4
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Fingerprint

Antireflection coatings
Solar cells
Transfer matrix method
Reflectometers
Molecular beam epitaxy
Crystal lattices
Sputtering
Demonstrations
Doping (additives)
Single crystals
Crystalline materials
Substrates
Multi-junction solar cells

Keywords

  • Gallium arsenide
  • Optical reflection
  • Optimization
  • Optoelectronic devices
  • Photovoltaic cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Liu, S., Becker, J., Farrell, S., Yang, W., & Zhang, Y-H. (2013). SiO2/ZnSe anti-reflection coating for solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 2105-2108). [6744889] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744889

SiO2/ZnSe anti-reflection coating for solar cells. / Liu, Shi; Becker, Jacob; Farrell, Stuart; Yang, Weiquan; Zhang, Yong-Hang.

Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2105-2108 6744889.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, S, Becker, J, Farrell, S, Yang, W & Zhang, Y-H 2013, SiO2/ZnSe anti-reflection coating for solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6744889, Institute of Electrical and Electronics Engineers Inc., pp. 2105-2108, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744889
Liu S, Becker J, Farrell S, Yang W, Zhang Y-H. SiO2/ZnSe anti-reflection coating for solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc. 2013. p. 2105-2108. 6744889 https://doi.org/10.1109/PVSC.2013.6744889
Liu, Shi ; Becker, Jacob ; Farrell, Stuart ; Yang, Weiquan ; Zhang, Yong-Hang. / SiO2/ZnSe anti-reflection coating for solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 2105-2108
@inproceedings{34e508cba1e3475f914e32f14964f7f9,
title = "SiO2/ZnSe anti-reflection coating for solar cells",
abstract = "This paper reports a proposal and demonstration of a novel anti-reflection coating (ARC) using a dielectric material, such as SiO2, in conjunction with lattice-matched and conductive crystalline ZnSe for GaAs based solar cells. The application of such an ARC to GaAs single-junction solar cell is used for the feasibility study. The transfer matrix method is applied to calculate the reflectance as well as determine the optimal SiO2 and ZnSe layer thicknesses. The simulation results indicate that a minimum reflection loss of 1.5{\%} is achievable when the SiO2 and ZnSe layer thicknesses are 91 nm and 49 nm, respectively. Test structures consisting of ZnSe and SiO2 layers were grown using molecular beam epitaxy and magnetron RF sputtering, respectively. The reflectance measurements of both samples showed 4.0{\%} total reflection loss over the absorbed solar spectrum. This newly proposed ARC can also be used for multi-junction solar cells based on GaAs as well as other single- or multi-junction solar cells based on different substrates. The single-crystal ZnSe layer with proper doping can also be used for current spreading to further improve the overall solar cell efficiencies.",
keywords = "Gallium arsenide, Optical reflection, Optimization, Optoelectronic devices, Photovoltaic cells",
author = "Shi Liu and Jacob Becker and Stuart Farrell and Weiquan Yang and Yong-Hang Zhang",
year = "2013",
doi = "10.1109/PVSC.2013.6744889",
language = "English (US)",
isbn = "9781479932993",
pages = "2105--2108",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - SiO2/ZnSe anti-reflection coating for solar cells

AU - Liu, Shi

AU - Becker, Jacob

AU - Farrell, Stuart

AU - Yang, Weiquan

AU - Zhang, Yong-Hang

PY - 2013

Y1 - 2013

N2 - This paper reports a proposal and demonstration of a novel anti-reflection coating (ARC) using a dielectric material, such as SiO2, in conjunction with lattice-matched and conductive crystalline ZnSe for GaAs based solar cells. The application of such an ARC to GaAs single-junction solar cell is used for the feasibility study. The transfer matrix method is applied to calculate the reflectance as well as determine the optimal SiO2 and ZnSe layer thicknesses. The simulation results indicate that a minimum reflection loss of 1.5% is achievable when the SiO2 and ZnSe layer thicknesses are 91 nm and 49 nm, respectively. Test structures consisting of ZnSe and SiO2 layers were grown using molecular beam epitaxy and magnetron RF sputtering, respectively. The reflectance measurements of both samples showed 4.0% total reflection loss over the absorbed solar spectrum. This newly proposed ARC can also be used for multi-junction solar cells based on GaAs as well as other single- or multi-junction solar cells based on different substrates. The single-crystal ZnSe layer with proper doping can also be used for current spreading to further improve the overall solar cell efficiencies.

AB - This paper reports a proposal and demonstration of a novel anti-reflection coating (ARC) using a dielectric material, such as SiO2, in conjunction with lattice-matched and conductive crystalline ZnSe for GaAs based solar cells. The application of such an ARC to GaAs single-junction solar cell is used for the feasibility study. The transfer matrix method is applied to calculate the reflectance as well as determine the optimal SiO2 and ZnSe layer thicknesses. The simulation results indicate that a minimum reflection loss of 1.5% is achievable when the SiO2 and ZnSe layer thicknesses are 91 nm and 49 nm, respectively. Test structures consisting of ZnSe and SiO2 layers were grown using molecular beam epitaxy and magnetron RF sputtering, respectively. The reflectance measurements of both samples showed 4.0% total reflection loss over the absorbed solar spectrum. This newly proposed ARC can also be used for multi-junction solar cells based on GaAs as well as other single- or multi-junction solar cells based on different substrates. The single-crystal ZnSe layer with proper doping can also be used for current spreading to further improve the overall solar cell efficiencies.

KW - Gallium arsenide

KW - Optical reflection

KW - Optimization

KW - Optoelectronic devices

KW - Photovoltaic cells

UR - http://www.scopus.com/inward/record.url?scp=84896469555&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896469555&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2013.6744889

DO - 10.1109/PVSC.2013.6744889

M3 - Conference contribution

AN - SCOPUS:84896469555

SN - 9781479932993

SP - 2105

EP - 2108

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

PB - Institute of Electrical and Electronics Engineers Inc.

ER -