Single-Interface and Quantum-Well Heterostructure MISFET's

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The physical operation of heterostructure metal-insulator-semiconductor field-effect transistors (H-MISFET's) is described and compared with that of more familiar heterostructure FET's. Undoped, doped-channel, and quantumwell MISFET's based on AIGaAs/GaAs heterostructures are examined. Focus is placed on quantumwell MISFET's, which differ most from more conventional devices. Results of experiments and simulations are presented to examine the physical mechanisms related to charge-control, gate leakage, device geometry, short-channel effects, buffer leakage, and electron trapping in the devices, and the advantages of other III—V materials systems are discussed. Finally, the potential advantages of H-MISFET's for circuit applications are discussed.

Original languageEnglish (US)
Pages (from-to)1304-1314
Number of pages11
JournalIEEE Transactions on Microwave Theory and Techniques
Volume37
Issue number9
DOIs
StatePublished - 1989
Externally publishedYes

Fingerprint

Semiconductor quantum wells
Heterojunctions
MISFET devices
field effect transistors
quantum wells
MIS (semiconductors)
leakage
Field effect transistors
buffers
trapping
Geometry
Electrons
Networks (circuits)
geometry
Experiments
electrons
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Radiation

Cite this

Single-Interface and Quantum-Well Heterostructure MISFET's. / Kiehl, Richard.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 37, No. 9, 1989, p. 1304-1314.

Research output: Contribution to journalArticle

@article{52932e369caf46a4b8d7c5c56d148aa5,
title = "Single-Interface and Quantum-Well Heterostructure MISFET's",
abstract = "The physical operation of heterostructure metal-insulator-semiconductor field-effect transistors (H-MISFET's) is described and compared with that of more familiar heterostructure FET's. Undoped, doped-channel, and quantumwell MISFET's based on AIGaAs/GaAs heterostructures are examined. Focus is placed on quantumwell MISFET's, which differ most from more conventional devices. Results of experiments and simulations are presented to examine the physical mechanisms related to charge-control, gate leakage, device geometry, short-channel effects, buffer leakage, and electron trapping in the devices, and the advantages of other III—V materials systems are discussed. Finally, the potential advantages of H-MISFET's for circuit applications are discussed.",
author = "Richard Kiehl",
year = "1989",
doi = "10.1109/22.32212",
language = "English (US)",
volume = "37",
pages = "1304--1314",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

TY - JOUR

T1 - Single-Interface and Quantum-Well Heterostructure MISFET's

AU - Kiehl, Richard

PY - 1989

Y1 - 1989

N2 - The physical operation of heterostructure metal-insulator-semiconductor field-effect transistors (H-MISFET's) is described and compared with that of more familiar heterostructure FET's. Undoped, doped-channel, and quantumwell MISFET's based on AIGaAs/GaAs heterostructures are examined. Focus is placed on quantumwell MISFET's, which differ most from more conventional devices. Results of experiments and simulations are presented to examine the physical mechanisms related to charge-control, gate leakage, device geometry, short-channel effects, buffer leakage, and electron trapping in the devices, and the advantages of other III—V materials systems are discussed. Finally, the potential advantages of H-MISFET's for circuit applications are discussed.

AB - The physical operation of heterostructure metal-insulator-semiconductor field-effect transistors (H-MISFET's) is described and compared with that of more familiar heterostructure FET's. Undoped, doped-channel, and quantumwell MISFET's based on AIGaAs/GaAs heterostructures are examined. Focus is placed on quantumwell MISFET's, which differ most from more conventional devices. Results of experiments and simulations are presented to examine the physical mechanisms related to charge-control, gate leakage, device geometry, short-channel effects, buffer leakage, and electron trapping in the devices, and the advantages of other III—V materials systems are discussed. Finally, the potential advantages of H-MISFET's for circuit applications are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0024739839&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024739839&partnerID=8YFLogxK

U2 - 10.1109/22.32212

DO - 10.1109/22.32212

M3 - Article

AN - SCOPUS:0024739839

VL - 37

SP - 1304

EP - 1314

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 9

ER -