Single high temperature step selective emitter structures using spin-on dopant sources

Peter J. Cousins; Christiana Honsberg; Jeffery E. Cotter

Single high temperature step selective emitter structures using spin-on dopant sources

Peter J. Cousins, Christiana Honsberg, Jeffery E. Cotter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The selective emitter provides a solution to the conflicting optical and electrical requirements on the emitter diffusion for a silicon solar ceil. The disadvantage of this structure is an increase in the number of high-temperature processes. A new method using spin-on doped and undoped oxides has enabled the selective emitter to be manufactured in one high temperature process. This method provides independent control over the two diffusion strengths via the dopant concentration of the spin-on oxides. A key feature of this method is the out-sourcing from a doped oxide to produce a quality heavy diffusion on a neighbouring device without the use of a sacrificial wafer.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Pages	281-284
Number of pages	4
State	Published - 2002
Externally published	Yes
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: May 19 2002 → May 24 2002

Other

Other	29th IEEE Photovoltaic Specialists Conference
Country/Territory	United States
City	New Orleans, LA
Period	5/19/02 → 5/24/02

ASJC Scopus subject areas

Control and Systems Engineering
Condensed Matter Physics

Cite this

@inproceedings{1565fb119c7e413ba6f120d6a3b4d6ee,

title = "Single high temperature step selective emitter structures using spin-on dopant sources",

abstract = "The selective emitter provides a solution to the conflicting optical and electrical requirements on the emitter diffusion for a silicon solar ceil. The disadvantage of this structure is an increase in the number of high-temperature processes. A new method using spin-on doped and undoped oxides has enabled the selective emitter to be manufactured in one high temperature process. This method provides independent control over the two diffusion strengths via the dopant concentration of the spin-on oxides. A key feature of this method is the out-sourcing from a doped oxide to produce a quality heavy diffusion on a neighbouring device without the use of a sacrificial wafer.",

author = "Cousins, {Peter J.} and Christiana Honsberg and Cotter, {Jeffery E.}",

year = "2002",

language = "English (US)",

pages = "281--284",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

note = "29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

}

TY - GEN

T1 - Single high temperature step selective emitter structures using spin-on dopant sources

AU - Cousins, Peter J.

AU - Honsberg, Christiana

AU - Cotter, Jeffery E.

PY - 2002

Y1 - 2002

N2 - The selective emitter provides a solution to the conflicting optical and electrical requirements on the emitter diffusion for a silicon solar ceil. The disadvantage of this structure is an increase in the number of high-temperature processes. A new method using spin-on doped and undoped oxides has enabled the selective emitter to be manufactured in one high temperature process. This method provides independent control over the two diffusion strengths via the dopant concentration of the spin-on oxides. A key feature of this method is the out-sourcing from a doped oxide to produce a quality heavy diffusion on a neighbouring device without the use of a sacrificial wafer.

AB - The selective emitter provides a solution to the conflicting optical and electrical requirements on the emitter diffusion for a silicon solar ceil. The disadvantage of this structure is an increase in the number of high-temperature processes. A new method using spin-on doped and undoped oxides has enabled the selective emitter to be manufactured in one high temperature process. This method provides independent control over the two diffusion strengths via the dopant concentration of the spin-on oxides. A key feature of this method is the out-sourcing from a doped oxide to produce a quality heavy diffusion on a neighbouring device without the use of a sacrificial wafer.

UR - http://www.scopus.com/inward/record.url?scp=0036956795&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036956795&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0036956795

SP - 281

EP - 284

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

Single high temperature step selective emitter structures using spin-on dopant sources

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this