Single high temperature step selective emitter structures using spin-on dopant sources

Peter J. Cousins, Christiana Honsberg, Jeffery E. Cotter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The selective emitter provides a solution to the conflicting optical and electrical requirements on the emitter diffusion for a silicon solar ceil. The disadvantage of this structure is an increase in the number of high-temperature processes. A new method using spin-on doped and undoped oxides has enabled the selective emitter to be manufactured in one high temperature process. This method provides independent control over the two diffusion strengths via the dopant concentration of the spin-on oxides. A key feature of this method is the out-sourcing from a doped oxide to produce a quality heavy diffusion on a neighbouring device without the use of a sacrificial wafer.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages281-284
Number of pages4
StatePublished - 2002
Externally publishedYes
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: May 19 2002May 24 2002

Other

Other29th IEEE Photovoltaic Specialists Conference
CountryUnited States
CityNew Orleans, LA
Period5/19/025/24/02

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

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  • Cite this

    Cousins, P. J., Honsberg, C., & Cotter, J. E. (2002). Single high temperature step selective emitter structures using spin-on dopant sources. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 281-284)