Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits

Jereme Neuendank; Matthew Spear; Trace Wallace; Donald Wilson; Jose Solano; Gedeon Irumva; Ivan Sanchez Esqueda; Hugh J. Barnaby; Lawrence T Clark; John Brunhaver; Marek Turowski; Esko Mikkola; David Hughart; Joshua Young; Jack Manuel; Sapan Agarwal; Bastiaan Vaandrager; Gyorgy Vizkelethy; Amos Gutierrez; James Trippe; Michael King; Edward Bielejec; Matthew Marinella

doi:10.1109/REDW56037.2022.9921478

Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits

Jereme Neuendank, Matthew Spear, Trace Wallace, Donald Wilson, Jose Solano, Gedeon Irumva, Ivan Sanchez Esqueda, Hugh J. Barnaby, Lawrence T Clark, John Brunhaver, Marek Turowski, Esko Mikkola, David Hughart, Joshua Young, Jack Manuel, Sapan Agarwal, Bastiaan Vaandrager, Gyorgy Vizkelethy, Amos Gutierrez, James TrippeMichael King, Edward Bielejec, Matthew Marinella

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Experimental results show the response of Global Foundries (GF) 12-nm bulk FinFET digital structures to 10 keV x-ray, 60 Co gamma rays, and heavy ions. Among the structures are circuits of 19 scan chains each made up of 15840 digital flip-flops (DFF). Other test structures include digital cells including modified inverters, two input NOR, three input NOR, two input NAND, and three input NAND. Heavy ion sources and 63.6 rad (SiO2) s gamma rays were provided by Sandia National Laboratories in Albuquerque, New Mexico. The x-ray source was provided by the SES facility at AFRL in Albuquerque, New Mexico. Single event upset (SEU) cross-sections vs. ion linear energy transfer (LET) for the digital flip-flop chains are extracted. Total ionizing dose (TID) experimental results for both the modified digital cells and DFF circuits are reported.

Original language	English (US)
Title of host publication	2022 IEEE Radiation Effects Data Workshop, REDW 2022 - in conjunction with 2022 NSREC, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665488563
DOIs	https://doi.org/10.1109/REDW56037.2022.9921478
State	Published - 2022
Event	2022 IEEE Radiation Effects Data Workshop, REDW 2022 - Provo, United States Duration: Jul 18 2022 → Jul 22 2022

Publication series

Name	IEEE Radiation Effects Data Workshop
Volume	2022-July

Conference

Conference	2022 IEEE Radiation Effects Data Workshop, REDW 2022
Country/Territory	United States
City	Provo
Period	7/18/22 → 7/22/22

Keywords

FinFET
digital flip-flop
single event upset
total ionizing dose

ASJC Scopus subject areas

Electrical and Electronic Engineering
Radiation
Nuclear and High Energy Physics

Access to Document

10.1109/REDW56037.2022.9921478

Cite this

Neuendank, J., Spear, M., Wallace, T., Wilson, D., Solano, J., Irumva, G., Esqueda, I. S., Barnaby, H. J., Clark, L. T., Brunhaver, J., Turowski, M., Mikkola, E., Hughart, D., Young, J., Manuel, J., Agarwal, S., Vaandrager, B., Vizkelethy, G., Gutierrez, A., ... Marinella, M. (2022). Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits. In 2022 IEEE Radiation Effects Data Workshop, REDW 2022 - in conjunction with 2022 NSREC, Proceedings (IEEE Radiation Effects Data Workshop; Vol. 2022-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/REDW56037.2022.9921478

Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits. / Neuendank, Jereme; Spear, Matthew; Wallace, Trace et al.
2022 IEEE Radiation Effects Data Workshop, REDW 2022 - in conjunction with 2022 NSREC, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2022. (IEEE Radiation Effects Data Workshop; Vol. 2022-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Neuendank, J, Spear, M, Wallace, T, Wilson, D, Solano, J, Irumva, G, Esqueda, IS , Barnaby, HJ, Clark, LT, Brunhaver, J, Turowski, M, Mikkola, E, Hughart, D, Young, J, Manuel, J, Agarwal, S, Vaandrager, B, Vizkelethy, G, Gutierrez, A, Trippe, J, King, M, Bielejec, E & Marinella, M 2022, Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits. in 2022 IEEE Radiation Effects Data Workshop, REDW 2022 - in conjunction with 2022 NSREC, Proceedings. IEEE Radiation Effects Data Workshop, vol. 2022-July, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE Radiation Effects Data Workshop, REDW 2022, Provo, United States, 7/18/22. https://doi.org/10.1109/REDW56037.2022.9921478

Neuendank J, Spear M, Wallace T, Wilson D, Solano J, Irumva G et al. Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits. In 2022 IEEE Radiation Effects Data Workshop, REDW 2022 - in conjunction with 2022 NSREC, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2022. (IEEE Radiation Effects Data Workshop). doi: 10.1109/REDW56037.2022.9921478

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abstract = "Experimental results show the response of Global Foundries (GF) 12-nm bulk FinFET digital structures to 10 keV x-ray, 60 Co gamma rays, and heavy ions. Among the structures are circuits of 19 scan chains each made up of 15840 digital flip-flops (DFF). Other test structures include digital cells including modified inverters, two input NOR, three input NOR, two input NAND, and three input NAND. Heavy ion sources and 63.6 rad (SiO2) s gamma rays were provided by Sandia National Laboratories in Albuquerque, New Mexico. The x-ray source was provided by the SES facility at AFRL in Albuquerque, New Mexico. Single event upset (SEU) cross-sections vs. ion linear energy transfer (LET) for the digital flip-flop chains are extracted. Total ionizing dose (TID) experimental results for both the modified digital cells and DFF circuits are reported.",

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author = "Jereme Neuendank and Matthew Spear and Trace Wallace and Donald Wilson and Jose Solano and Gedeon Irumva and Esqueda, {Ivan Sanchez} and Barnaby, {Hugh J.} and Clark, {Lawrence T} and John Brunhaver and Marek Turowski and Esko Mikkola and David Hughart and Joshua Young and Jack Manuel and Sapan Agarwal and Bastiaan Vaandrager and Gyorgy Vizkelethy and Amos Gutierrez and James Trippe and Michael King and Edward Bielejec and Matthew Marinella",

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language = "English (US)",

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AU - Esqueda, Ivan Sanchez

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AU - Manuel, Jack

AU - Agarwal, Sapan

AU - Vaandrager, Bastiaan

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AU - Bielejec, Edward

AU - Marinella, Matthew

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N2 - Experimental results show the response of Global Foundries (GF) 12-nm bulk FinFET digital structures to 10 keV x-ray, 60 Co gamma rays, and heavy ions. Among the structures are circuits of 19 scan chains each made up of 15840 digital flip-flops (DFF). Other test structures include digital cells including modified inverters, two input NOR, three input NOR, two input NAND, and three input NAND. Heavy ion sources and 63.6 rad (SiO2) s gamma rays were provided by Sandia National Laboratories in Albuquerque, New Mexico. The x-ray source was provided by the SES facility at AFRL in Albuquerque, New Mexico. Single event upset (SEU) cross-sections vs. ion linear energy transfer (LET) for the digital flip-flop chains are extracted. Total ionizing dose (TID) experimental results for both the modified digital cells and DFF circuits are reported.

AB - Experimental results show the response of Global Foundries (GF) 12-nm bulk FinFET digital structures to 10 keV x-ray, 60 Co gamma rays, and heavy ions. Among the structures are circuits of 19 scan chains each made up of 15840 digital flip-flops (DFF). Other test structures include digital cells including modified inverters, two input NOR, three input NOR, two input NAND, and three input NAND. Heavy ion sources and 63.6 rad (SiO2) s gamma rays were provided by Sandia National Laboratories in Albuquerque, New Mexico. The x-ray source was provided by the SES facility at AFRL in Albuquerque, New Mexico. Single event upset (SEU) cross-sections vs. ion linear energy transfer (LET) for the digital flip-flop chains are extracted. Total ionizing dose (TID) experimental results for both the modified digital cells and DFF circuits are reported.

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Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits

Abstract

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Keywords

ASJC Scopus subject areas

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