Single event transient effects in a voltage reference

P. C. Adell; R. D. Schrimpf; C. R. Cirba; W. T. Holman; X. Zhu; H. J. Barnaby; O. Mion

doi:10.1016/j.microrel.2004.05.029

Single event transient effects in a voltage reference

P. C. Adell, R. D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, H. J. Barnaby, O. Mion

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The Single Event Transient response of the LM236 band gap voltage reference from Texas Instruments is analyzed through heavy ion experiments and simulation. The LM236 circuit calibration was performed using generic transistor parameters that were subsequently optimized using device and circuit simulations. This technique avoids the requirement for performing detailed device-level parameter extraction and simplifies the SET methodology for circuit calibration.

Original language	English (US)
Pages (from-to)	355-359
Number of pages	5
Journal	Microelectronics Reliability
Volume	45
Issue number	2
DOIs	https://doi.org/10.1016/j.microrel.2004.05.029
State	Published - Feb 2005
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2004.05.029

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@article{5508cfee60994b9e8cc0e8fb4fc3c304,

title = "Single event transient effects in a voltage reference",

abstract = "The Single Event Transient response of the LM236 band gap voltage reference from Texas Instruments is analyzed through heavy ion experiments and simulation. The LM236 circuit calibration was performed using generic transistor parameters that were subsequently optimized using device and circuit simulations. This technique avoids the requirement for performing detailed device-level parameter extraction and simplifies the SET methodology for circuit calibration.",

author = "Adell, {P. C.} and Schrimpf, {R. D.} and Cirba, {C. R.} and Holman, {W. T.} and X. Zhu and Barnaby, {H. J.} and O. Mion",

note = "Funding Information: This work was supported in part by the Defense Threat Reduction Agency and Alcatel Space. The authors wish to thank Dan Fleetwood, Lloyd Massengill, Philippe Calvel, Christian Chatry and Jean Gasiot for their contributions to this work. Part of this work was presented at the 2001 Single Event Effects Symposium in Los Angeles, California. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2005",

month = feb,

doi = "10.1016/j.microrel.2004.05.029",

language = "English (US)",

volume = "45",

pages = "355--359",

journal = "Microelectronics and Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "2",

}

TY - JOUR

T1 - Single event transient effects in a voltage reference

AU - Adell, P. C.

AU - Schrimpf, R. D.

AU - Cirba, C. R.

AU - Holman, W. T.

AU - Zhu, X.

AU - Barnaby, H. J.

AU - Mion, O.

N1 - Funding Information: This work was supported in part by the Defense Threat Reduction Agency and Alcatel Space. The authors wish to thank Dan Fleetwood, Lloyd Massengill, Philippe Calvel, Christian Chatry and Jean Gasiot for their contributions to this work. Part of this work was presented at the 2001 Single Event Effects Symposium in Los Angeles, California. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2005/2

Y1 - 2005/2

N2 - The Single Event Transient response of the LM236 band gap voltage reference from Texas Instruments is analyzed through heavy ion experiments and simulation. The LM236 circuit calibration was performed using generic transistor parameters that were subsequently optimized using device and circuit simulations. This technique avoids the requirement for performing detailed device-level parameter extraction and simplifies the SET methodology for circuit calibration.

AB - The Single Event Transient response of the LM236 band gap voltage reference from Texas Instruments is analyzed through heavy ion experiments and simulation. The LM236 circuit calibration was performed using generic transistor parameters that were subsequently optimized using device and circuit simulations. This technique avoids the requirement for performing detailed device-level parameter extraction and simplifies the SET methodology for circuit calibration.

UR - http://www.scopus.com/inward/record.url?scp=11344272398&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11344272398&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2004.05.029

DO - 10.1016/j.microrel.2004.05.029

M3 - Article

AN - SCOPUS:11344272398

SN - 0026-2714

VL - 45

SP - 355

EP - 359

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

IS - 2

ER -

Single event transient effects in a voltage reference

Abstract

ASJC Scopus subject areas

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