Single event transient effects in a voltage reference

P. C. Adell, R. D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, Hugh Barnaby, O. Mion

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The Single Event Transient response of the LM236 band gap voltage reference from Texas Instruments is analyzed through heavy ion experiments and simulation. The LM236 circuit calibration was performed using generic transistor parameters that were subsequently optimized using device and circuit simulations. This technique avoids the requirement for performing detailed device-level parameter extraction and simplifies the SET methodology for circuit calibration.

Original languageEnglish (US)
Pages (from-to)355-359
Number of pages5
JournalMicroelectronics Reliability
Volume45
Issue number2
DOIs
StatePublished - Feb 2005
Externally publishedYes

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Calibration
Heavy Ions
Parameter extraction
Networks (circuits)
Circuit simulation
Electric potential
electric potential
Heavy ions
Transient analysis
Transistors
Energy gap
transient response
heavy ions
transistors
simulation
methodology
requirements
Experiments

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Adell, P. C., Schrimpf, R. D., Cirba, C. R., Holman, W. T., Zhu, X., Barnaby, H., & Mion, O. (2005). Single event transient effects in a voltage reference. Microelectronics Reliability, 45(2), 355-359. https://doi.org/10.1016/j.microrel.2004.05.029

Single event transient effects in a voltage reference. / Adell, P. C.; Schrimpf, R. D.; Cirba, C. R.; Holman, W. T.; Zhu, X.; Barnaby, Hugh; Mion, O.

In: Microelectronics Reliability, Vol. 45, No. 2, 02.2005, p. 355-359.

Research output: Contribution to journalArticle

Adell, PC, Schrimpf, RD, Cirba, CR, Holman, WT, Zhu, X, Barnaby, H & Mion, O 2005, 'Single event transient effects in a voltage reference', Microelectronics Reliability, vol. 45, no. 2, pp. 355-359. https://doi.org/10.1016/j.microrel.2004.05.029
Adell, P. C. ; Schrimpf, R. D. ; Cirba, C. R. ; Holman, W. T. ; Zhu, X. ; Barnaby, Hugh ; Mion, O. / Single event transient effects in a voltage reference. In: Microelectronics Reliability. 2005 ; Vol. 45, No. 2. pp. 355-359.
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