Single event transient effects in a voltage reference

P. C. Adell, R. D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, H. J. Barnaby, O. Mion

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

The Single Event Transient response of the LM236 band gap voltage reference from Texas Instruments is analyzed through heavy ion experiments and simulation. The LM236 circuit calibration was performed using generic transistor parameters that were subsequently optimized using device and circuit simulations. This technique avoids the requirement for performing detailed device-level parameter extraction and simplifies the SET methodology for circuit calibration.

Original languageEnglish (US)
Pages (from-to)355-359
Number of pages5
JournalMicroelectronics Reliability
Volume45
Issue number2
DOIs
StatePublished - Feb 1 2005
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • Cite this

    Adell, P. C., Schrimpf, R. D., Cirba, C. R., Holman, W. T., Zhu, X., Barnaby, H. J., & Mion, O. (2005). Single event transient effects in a voltage reference. Microelectronics Reliability, 45(2), 355-359. https://doi.org/10.1016/j.microrel.2004.05.029