Abstract

Ion-strike-induced single event transients in a type of nonvolatile resistive memory known as conductive bridge resistive memory (CBRAM) are investigated. Experimental data demonstrating bit upsets in 1T-1R devices under heavy ion strike are presented which show evidence of transitions from not only high to low resistance states but also from low to high resistance states. This is reported for such devices here for the first time. Device and circuit level simulations performed under various bias conditions are used to analyze possible upset modes. A crossbar CBRAM architecture without transistor selectors that offers higher density is also analyzed and shown to be susceptible to multiple bit upsets unlike 1T-1R array. Susceptibility of a 256 ×256 crossbar array to strike induced transients under two different bias schemes is simulated.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
DOIs
StateAccepted/In press - Nov 9 2015

Fingerprint

magnetic permeability
Data storage equipment
Heavy ions
selectors
Transistors
low resistance
high resistance
Networks (circuits)
heavy ions
Ions
transistors
ions
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Single Event Susceptibility Analysis in CBRAM Resistive Memory Arrays. / Mahalanabis, Debayan; Liu, Rui; Barnaby, Hugh; Yu, Shimeng; Kozicki, Michael; Mahmud, Adnan; Deionno, Erica.

In: IEEE Transactions on Nuclear Science, 09.11.2015.

Research output: Contribution to journalArticle

Mahalanabis, Debayan ; Liu, Rui ; Barnaby, Hugh ; Yu, Shimeng ; Kozicki, Michael ; Mahmud, Adnan ; Deionno, Erica. / Single Event Susceptibility Analysis in CBRAM Resistive Memory Arrays. In: IEEE Transactions on Nuclear Science. 2015.
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