Abstract

Ion-strike-induced single event transients in a type of nonvolatile resistive memory known as conductive bridge resistive memory (CBRAM) are investigated. Experimental data demonstrating bit upsets in 1T-1R devices under heavy ion strike are presented which show evidence of transitions from not only high to low resistance states but also from low to high resistance states. This is reported for such devices here for the first time. Device and circuit level simulations performed under various bias conditions are used to analyze possible upset modes. A crossbar CBRAM architecture without transistor selectors that offers higher density is also analyzed and shown to be susceptible to multiple bit upsets unlike 1T-1R array. Susceptibility of a 256 times 256 crossbar array to strike induced transients under two different bias schemes is simulated.

Original languageEnglish (US)
Article number7322300
Pages (from-to)2606-2612
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume62
Issue number6
DOIs
StatePublished - Dec 2015

Keywords

  • Chalcogenide
  • electrochemical memory cell
  • nano-ionic memory
  • programmable metallization cell (PMC)
  • programmable metallization cells
  • radiation effects
  • resistive RAM (ReRAM)
  • single event effects
  • single event transients
  • single event upset

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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