Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology

Saeed Zeinolabedinzadeh, Ahmet C. Ulusoy, Farzad Inanlou, Hanbin Ying, Yunyi Gong, Zachary E. Fleetwood, Nicolas J.H. Roche, Ani Khachatrian, Dale McMorrow, Stephen P. Buchner, Jeffrey H. Warner, Pauline Paki-Amouzou, John D. Cressler

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The single-event transient (SET) response of a W-band (75-110 GHz) radar receiver front-end is investigated in this paper. A new technique to facilitate the SET testing of the high frequency transceivers is proposed and demonstrated experimentally. The entire radar receiver front-end, including the high frequency signal sources and modulators, were designed and fully integrated in 90 nm 300 GHz SiGe process technology (Global Foundries SiGe 9HP). Two-photon absorption (TPA) laser pulses were utilized to induce transient currents in different devices in various circuit blocks. The study shows how short transient pulses from the high frequency tuned circuits are propagated throughout the receiver and are broadened while passing through low-pass filters present at supply nodes and the low-pass filter following the down-conversion mixer, thus affecting the digital data at the output of the receiver. The proposed methodology allows the study of the effect of SETs on the recovered digital data at the output of the high frequency receivers, thus allowing bit error rate calculations. Comprehensive device and circuit level simulations were also performed, and a close agreement between the measurement results and simulation data was demonstrated. To the authors' best knowledge, this is the first study of SET on full receiver at millimeter-wave (mmW) frequencies.

Original languageEnglish (US)
Article number7781599
Pages (from-to)536-543
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume64
Issue number1
DOIs
StatePublished - Jan 2017
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
Millimeter waves
millimeter waves
radar receivers
receivers
Radar receivers
digital data
low pass filters
Low pass filters
Networks (circuits)
Mixer circuits
foundries
output
transient response
transmitter receivers
data simulation
Foundries
bit error rate
pulses
Transceivers

Keywords

  • Cubesat
  • extreme environments
  • millimeter-wave
  • radar
  • radiometer
  • receiver
  • SiGe
  • silicon-germanium
  • single-event transient
  • space missions
  • two-photon absorption laser
  • W-band

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology. / Zeinolabedinzadeh, Saeed; Ulusoy, Ahmet C.; Inanlou, Farzad; Ying, Hanbin; Gong, Yunyi; Fleetwood, Zachary E.; Roche, Nicolas J.H.; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Warner, Jeffrey H.; Paki-Amouzou, Pauline; Cressler, John D.

In: IEEE Transactions on Nuclear Science, Vol. 64, No. 1, 7781599, 01.2017, p. 536-543.

Research output: Contribution to journalArticle

Zeinolabedinzadeh, S, Ulusoy, AC, Inanlou, F, Ying, H, Gong, Y, Fleetwood, ZE, Roche, NJH, Khachatrian, A, McMorrow, D, Buchner, SP, Warner, JH, Paki-Amouzou, P & Cressler, JD 2017, 'Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology', IEEE Transactions on Nuclear Science, vol. 64, no. 1, 7781599, pp. 536-543. https://doi.org/10.1109/TNS.2016.2638698
Zeinolabedinzadeh, Saeed ; Ulusoy, Ahmet C. ; Inanlou, Farzad ; Ying, Hanbin ; Gong, Yunyi ; Fleetwood, Zachary E. ; Roche, Nicolas J.H. ; Khachatrian, Ani ; McMorrow, Dale ; Buchner, Stephen P. ; Warner, Jeffrey H. ; Paki-Amouzou, Pauline ; Cressler, John D. / Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology. In: IEEE Transactions on Nuclear Science. 2017 ; Vol. 64, No. 1. pp. 536-543.
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