Single-electron tunneling in silicon-on-insulator nano-wire transistors

K. H. Cho, S. H. Son, S. H. Hong, B. C. Kim, S. W. Hwang, D. Ahn, B. G. Park, B. Naser, J. F. Lin, J. P. Bird, D. K. Ferry

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nano-wire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated.

Original languageEnglish (US)
Pages (from-to)245-251
Number of pages7
JournalSuperlattices and Microstructures
Volume34
Issue number3-6
DOIs
StatePublished - Sep 2003

Fingerprint

Electron tunneling
Silicon
electron tunneling
Semiconductor quantum dots
Transistors
transistors
insulators
wire
Wire
quantum dots
silicon
oscillations

Keywords

  • Nano-wire
  • Potential fluctuation
  • Single-electron tunneling
  • SOI

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Cho, K. H., Son, S. H., Hong, S. H., Kim, B. C., Hwang, S. W., Ahn, D., ... Ferry, D. K. (2003). Single-electron tunneling in silicon-on-insulator nano-wire transistors. Superlattices and Microstructures, 34(3-6), 245-251. https://doi.org/10.1016/j.spmi.2004.03.015

Single-electron tunneling in silicon-on-insulator nano-wire transistors. / Cho, K. H.; Son, S. H.; Hong, S. H.; Kim, B. C.; Hwang, S. W.; Ahn, D.; Park, B. G.; Naser, B.; Lin, J. F.; Bird, J. P.; Ferry, D. K.

In: Superlattices and Microstructures, Vol. 34, No. 3-6, 09.2003, p. 245-251.

Research output: Contribution to journalArticle

Cho, KH, Son, SH, Hong, SH, Kim, BC, Hwang, SW, Ahn, D, Park, BG, Naser, B, Lin, JF, Bird, JP & Ferry, DK 2003, 'Single-electron tunneling in silicon-on-insulator nano-wire transistors', Superlattices and Microstructures, vol. 34, no. 3-6, pp. 245-251. https://doi.org/10.1016/j.spmi.2004.03.015
Cho, K. H. ; Son, S. H. ; Hong, S. H. ; Kim, B. C. ; Hwang, S. W. ; Ahn, D. ; Park, B. G. ; Naser, B. ; Lin, J. F. ; Bird, J. P. ; Ferry, D. K. / Single-electron tunneling in silicon-on-insulator nano-wire transistors. In: Superlattices and Microstructures. 2003 ; Vol. 34, No. 3-6. pp. 245-251.
@article{59620aa6e96c49c68b2ae6f447b79dde,
title = "Single-electron tunneling in silicon-on-insulator nano-wire transistors",
abstract = "The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nano-wire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated.",
keywords = "Nano-wire, Potential fluctuation, Single-electron tunneling, SOI",
author = "Cho, {K. H.} and Son, {S. H.} and Hong, {S. H.} and Kim, {B. C.} and Hwang, {S. W.} and D. Ahn and Park, {B. G.} and B. Naser and Lin, {J. F.} and Bird, {J. P.} and Ferry, {D. K.}",
year = "2003",
month = "9",
doi = "10.1016/j.spmi.2004.03.015",
language = "English (US)",
volume = "34",
pages = "245--251",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "3-6",

}

TY - JOUR

T1 - Single-electron tunneling in silicon-on-insulator nano-wire transistors

AU - Cho, K. H.

AU - Son, S. H.

AU - Hong, S. H.

AU - Kim, B. C.

AU - Hwang, S. W.

AU - Ahn, D.

AU - Park, B. G.

AU - Naser, B.

AU - Lin, J. F.

AU - Bird, J. P.

AU - Ferry, D. K.

PY - 2003/9

Y1 - 2003/9

N2 - The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nano-wire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated.

AB - The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nano-wire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated.

KW - Nano-wire

KW - Potential fluctuation

KW - Single-electron tunneling

KW - SOI

UR - http://www.scopus.com/inward/record.url?scp=3242684232&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3242684232&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2004.03.015

DO - 10.1016/j.spmi.2004.03.015

M3 - Article

AN - SCOPUS:3242684232

VL - 34

SP - 245

EP - 251

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 3-6

ER -