Single-electron tunneling in silicon-on-insulator nano-wire transistors

K. H. Cho, S. H. Son, S. H. Hong, B. C. Kim, S. W. Hwang, D. Ahn, B. G. Park, B. Naser, J. F. Lin, J. P. Bird, D. K. Ferry

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nano-wire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated.

Original languageEnglish (US)
Pages (from-to)245-251
Number of pages7
JournalSuperlattices and Microstructures
Volume34
Issue number3-6
DOIs
StatePublished - Sep 1 2003

Keywords

  • Nano-wire
  • Potential fluctuation
  • SOI
  • Single-electron tunneling

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Cho, K. H., Son, S. H., Hong, S. H., Kim, B. C., Hwang, S. W., Ahn, D., Park, B. G., Naser, B., Lin, J. F., Bird, J. P., & Ferry, D. K. (2003). Single-electron tunneling in silicon-on-insulator nano-wire transistors. Superlattices and Microstructures, 34(3-6), 245-251. https://doi.org/10.1016/j.spmi.2004.03.015