We present experimental results for two types of quantum dots, which are embedded within a silicon metal-oxide-semiconductor structure. Evidence is found for single-electron charging at low temperature, and for an asymmetric shape of the dot. First results of simulations of these dots are presented.
|Original language||English (US)|
|Number of pages||7|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - Oct 2000|
ASJC Scopus subject areas
- Materials Science(all)