Single-electron quantum dots in silicon MOS structures

M. Khoury, A. Gunther, S. Miličić, J. Rack, Stephen Goodnick, Dragica Vasileska, Trevor Thornton, D. K. Ferry

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We present experimental results for two types of quantum dots, which are embedded within a silicon metal-oxide-semiconductor structure. Evidence is found for single-electron charging at low temperature, and for an asymmetric shape of the dot. First results of simulations of these dots are presented.

Original languageEnglish (US)
Pages (from-to)415-421
Number of pages7
JournalApplied Physics A: Materials Science and Processing
Volume71
Issue number4
DOIs
StatePublished - Oct 2000

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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