Single-electron quantum dots in silicon MOS structures

M. Khoury, A. Gunther, S. Miličić, J. Rack, Stephen Goodnick, Dragica Vasileska, Trevor Thornton, D. K. Ferry

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We present experimental results for two types of quantum dots, which are embedded within a silicon metal-oxide-semiconductor structure. Evidence is found for single-electron charging at low temperature, and for an asymmetric shape of the dot. First results of simulations of these dots are presented.

Original languageEnglish (US)
Pages (from-to)415-421
Number of pages7
JournalApplied Physics A: Materials Science and Processing
Volume71
Issue number4
StatePublished - Oct 2000

Fingerprint

Silicon
silicon oxides
metal oxide semiconductors
Semiconductor quantum dots
charging
Metals
quantum dots
Electrons
silicon
electrons
simulation
Temperature
Oxide semiconductors

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Khoury, M., Gunther, A., Miličić, S., Rack, J., Goodnick, S., Vasileska, D., ... Ferry, D. K. (2000). Single-electron quantum dots in silicon MOS structures. Applied Physics A: Materials Science and Processing, 71(4), 415-421.

Single-electron quantum dots in silicon MOS structures. / Khoury, M.; Gunther, A.; Miličić, S.; Rack, J.; Goodnick, Stephen; Vasileska, Dragica; Thornton, Trevor; Ferry, D. K.

In: Applied Physics A: Materials Science and Processing, Vol. 71, No. 4, 10.2000, p. 415-421.

Research output: Contribution to journalArticle

Khoury, M, Gunther, A, Miličić, S, Rack, J, Goodnick, S, Vasileska, D, Thornton, T & Ferry, DK 2000, 'Single-electron quantum dots in silicon MOS structures', Applied Physics A: Materials Science and Processing, vol. 71, no. 4, pp. 415-421.
Khoury, M. ; Gunther, A. ; Miličić, S. ; Rack, J. ; Goodnick, Stephen ; Vasileska, Dragica ; Thornton, Trevor ; Ferry, D. K. / Single-electron quantum dots in silicon MOS structures. In: Applied Physics A: Materials Science and Processing. 2000 ; Vol. 71, No. 4. pp. 415-421.
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