Single electron effects in silicon quantum dots in a MOSFET structure

M. Khoury, A. Gunther, M. J. Rack, D. P. Pivin, D. K. Ferry

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

We have fabricated silicon quantum dot devices based on a dual gate technique. Two lateral gates deplete the inversion layer which is induced by a top gate, thus forming a quantum dot located between the source and drain of a long channel MOSFET. Lithographic dimensions of the dots ranged from 40 nm to 200 nm. Measurements at low temperatures indicate that electrostatic confinement reduces the dot size to 15 nm. We observe evidence of quantum effects as we step the fermi energy by the top gate as well as magnetic field.

Original languageEnglish (US)
Pages (from-to)189-191
Number of pages3
JournalMicroelectronic Engineering
Volume47
Issue number1
DOIs
StatePublished - Jun 1999
EventProceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) - Kauai, HI, USA
Duration: Dec 7 1998Dec 11 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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    Khoury, M., Gunther, A., Rack, M. J., Pivin, D. P., & Ferry, D. K. (1999). Single electron effects in silicon quantum dots in a MOSFET structure. Microelectronic Engineering, 47(1), 189-191. https://doi.org/10.1016/S0167-9317(99)00186-0