Single electron effects in silicon quantum dots in a MOSFET structure

M. Khoury; A. Gunther; M. J. Rack; D. P. Pivin; D. K. Ferry

doi:10.1016/S0167-9317(99)00186-0

Single electron effects in silicon quantum dots in a MOSFET structure

M. Khoury, A. Gunther, M. J. Rack, D. P. Pivin, D. K. Ferry

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We have fabricated silicon quantum dot devices based on a dual gate technique. Two lateral gates deplete the inversion layer which is induced by a top gate, thus forming a quantum dot located between the source and drain of a long channel MOSFET. Lithographic dimensions of the dots ranged from 40 nm to 200 nm. Measurements at low temperatures indicate that electrostatic confinement reduces the dot size to 15 nm. We observe evidence of quantum effects as we step the fermi energy by the top gate as well as magnetic field.

Original language	English (US)
Pages (from-to)	189-191
Number of pages	3
Journal	Microelectronic Engineering
Volume	47
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(99)00186-0
State	Published - Jun 1999
Event	Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) - Kauai, HI, USA Duration: Dec 7 1998 → Dec 11 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(99)00186-0

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title = "Single electron effects in silicon quantum dots in a MOSFET structure",

abstract = "We have fabricated silicon quantum dot devices based on a dual gate technique. Two lateral gates deplete the inversion layer which is induced by a top gate, thus forming a quantum dot located between the source and drain of a long channel MOSFET. Lithographic dimensions of the dots ranged from 40 nm to 200 nm. Measurements at low temperatures indicate that electrostatic confinement reduces the dot size to 15 nm. We observe evidence of quantum effects as we step the fermi energy by the top gate as well as magnetic field.",

author = "M. Khoury and A. Gunther and Rack, {M. J.} and Pivin, {D. P.} and Ferry, {D. K.}",

note = "Funding Information: ??This work is supported by DARPA; Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) ; Conference date: 07-12-1998 Through 11-12-1998",

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T1 - Single electron effects in silicon quantum dots in a MOSFET structure

AU - Khoury, M.

AU - Gunther, A.

AU - Rack, M. J.

AU - Pivin, D. P.

AU - Ferry, D. K.

N1 - Funding Information: ??This work is supported by DARPA

PY - 1999/6

Y1 - 1999/6

N2 - We have fabricated silicon quantum dot devices based on a dual gate technique. Two lateral gates deplete the inversion layer which is induced by a top gate, thus forming a quantum dot located between the source and drain of a long channel MOSFET. Lithographic dimensions of the dots ranged from 40 nm to 200 nm. Measurements at low temperatures indicate that electrostatic confinement reduces the dot size to 15 nm. We observe evidence of quantum effects as we step the fermi energy by the top gate as well as magnetic field.

AB - We have fabricated silicon quantum dot devices based on a dual gate technique. Two lateral gates deplete the inversion layer which is induced by a top gate, thus forming a quantum dot located between the source and drain of a long channel MOSFET. Lithographic dimensions of the dots ranged from 40 nm to 200 nm. Measurements at low temperatures indicate that electrostatic confinement reduces the dot size to 15 nm. We observe evidence of quantum effects as we step the fermi energy by the top gate as well as magnetic field.

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DO - 10.1016/S0167-9317(99)00186-0

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SP - 189

EP - 191

JO - Microelectronic Engineering

JF - Microelectronic Engineering

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T2 - Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98)

Y2 - 7 December 1998 through 11 December 1998

ER -

Single electron effects in silicon quantum dots in a MOSFET structure

Abstract

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