Single-electron effects in a point contact using side-gating in delta-doped layers

Kazuo Nakazato, Trevor Thornton, Julian White, Haroon Ahmed

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Side-gated point-contact structures in delta (δ)-doped layers have been used to form single-electron tunnel junctions with variable resistance. Clear Coulomb-blockade effects have been observed in the current-voltage characteristics. The measured characteristics are described in terms of a series of single-electron transistors formed by microsegments within the point contact. The effective tunnel capacitance and side-gate capacitance are estimated to be 10 and 1 aF, respectively, which are both one order of magnitude smaller than the reported capacitance of tunnel junctions made from Al or GaAs/AlGaAs heterostructures.

Original languageEnglish (US)
Pages (from-to)3145-3147
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number26
DOIs
StatePublished - 1992
Externally publishedYes

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capacitance
tunnel junctions
single electron transistors
electrons
aluminum gallium arsenides
tunnels
electric contacts
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Single-electron effects in a point contact using side-gating in delta-doped layers. / Nakazato, Kazuo; Thornton, Trevor; White, Julian; Ahmed, Haroon.

In: Applied Physics Letters, Vol. 61, No. 26, 1992, p. 3145-3147.

Research output: Contribution to journalArticle

Nakazato, Kazuo ; Thornton, Trevor ; White, Julian ; Ahmed, Haroon. / Single-electron effects in a point contact using side-gating in delta-doped layers. In: Applied Physics Letters. 1992 ; Vol. 61, No. 26. pp. 3145-3147.
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