Single-electron effects in a point contact using side-gating in delta-doped layers

Kazuo Nakazato; Trevor J. Thornton; Julian White; Haroon Ahmed

doi:10.1063/1.107988

Single-electron effects in a point contact using side-gating in delta-doped layers

Kazuo Nakazato, Trevor J. Thornton, Julian White, Haroon Ahmed

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

Side-gated point-contact structures in delta (δ)-doped layers have been used to form single-electron tunnel junctions with variable resistance. Clear Coulomb-blockade effects have been observed in the current-voltage characteristics. The measured characteristics are described in terms of a series of single-electron transistors formed by microsegments within the point contact. The effective tunnel capacitance and side-gate capacitance are estimated to be 10 and 1 aF, respectively, which are both one order of magnitude smaller than the reported capacitance of tunnel junctions made from Al or GaAs/AlGaAs heterostructures.

Original language	English (US)
Pages (from-to)	3145-3147
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	26
DOIs	https://doi.org/10.1063/1.107988
State	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.107988

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abstract = "Side-gated point-contact structures in delta (δ)-doped layers have been used to form single-electron tunnel junctions with variable resistance. Clear Coulomb-blockade effects have been observed in the current-voltage characteristics. The measured characteristics are described in terms of a series of single-electron transistors formed by microsegments within the point contact. The effective tunnel capacitance and side-gate capacitance are estimated to be 10 and 1 aF, respectively, which are both one order of magnitude smaller than the reported capacitance of tunnel junctions made from Al or GaAs/AlGaAs heterostructures.",

author = "Kazuo Nakazato and Thornton, {Trevor J.} and Julian White and Haroon Ahmed",

year = "1992",

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AU - Nakazato, Kazuo

AU - Thornton, Trevor J.

AU - White, Julian

AU - Ahmed, Haroon

PY - 1992

Y1 - 1992

N2 - Side-gated point-contact structures in delta (δ)-doped layers have been used to form single-electron tunnel junctions with variable resistance. Clear Coulomb-blockade effects have been observed in the current-voltage characteristics. The measured characteristics are described in terms of a series of single-electron transistors formed by microsegments within the point contact. The effective tunnel capacitance and side-gate capacitance are estimated to be 10 and 1 aF, respectively, which are both one order of magnitude smaller than the reported capacitance of tunnel junctions made from Al or GaAs/AlGaAs heterostructures.

AB - Side-gated point-contact structures in delta (δ)-doped layers have been used to form single-electron tunnel junctions with variable resistance. Clear Coulomb-blockade effects have been observed in the current-voltage characteristics. The measured characteristics are described in terms of a series of single-electron transistors formed by microsegments within the point contact. The effective tunnel capacitance and side-gate capacitance are estimated to be 10 and 1 aF, respectively, which are both one order of magnitude smaller than the reported capacitance of tunnel junctions made from Al or GaAs/AlGaAs heterostructures.

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JF - Applied Physics Letters

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Single-electron effects in a point contact using side-gating in delta-doped layers

Abstract

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