Abstract
A wide range of proposals has been made for exploiting single-electron effects in ultra-small structures. Impressions concerning the promise and progress in this field have been varied, probably because of the variety of proposals and their departure from conventional technology. The extent of the paradigm shift that would be needed to use single-electron effects in various applications has often not been clear since some applications represent straightforward extensions of current technology. In this context, some examples of current directions in research aimed at exploiting single-electron effects are presented, and the challenges in utilizing these in sensor, memory, and logic applications are discussed.
Original language | English (US) |
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Title of host publication | Annual Device Research Conference Digest |
Publisher | IEEE |
Pages | 128-130 |
Number of pages | 3 |
State | Published - 1999 |
Externally published | Yes |
Event | Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA Duration: Jun 28 1999 → Jun 30 1999 |
Other
Other | Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) |
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City | Santa Barbara, CA, USA |
Period | 6/28/99 → 6/30/99 |
ASJC Scopus subject areas
- Engineering(all)