Single-electron charging effects in Si MOS devices

D. K. Ferry, M. Khoury, C. Gerousis, M. J. Rack, A. Gunther, Stephen Goodnick

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Single-electron charging of small quantum dot structures has been observed for many years. Only recently, however, have the effects been observed in Si device structures suitable for integration into other Si technologies. In this talk, the background of work in Si will be reviewed and its applications to unique device and circuit architectures will be discussed. Experimental results obtained using double-gated quantum dots embedded within a Si MOSFET will be discussed. While the present results are primarily at low temperature, they promise the application of single-electron technology to more integrated circuitry.

Original languageEnglish (US)
Pages (from-to)69-75
Number of pages7
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume9
Issue number1
DOIs
StatePublished - Jan 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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