TY - JOUR
T1 - Single-electron charging effects in Si MOS devices
AU - Ferry, D. K.
AU - Khoury, M.
AU - Gerousis, C.
AU - Rack, M. J.
AU - Gunther, A.
AU - Goodnick, Stephen
N1 - Funding Information:
This work is supported by the Office of Naval Research. The authors have benefited from discussions with L.A. Akers, J.P. Bird, L. Chua, K. Hess, C. Lent, W. Porod, and T.J. Thornton.
PY - 2001/1
Y1 - 2001/1
N2 - Single-electron charging of small quantum dot structures has been observed for many years. Only recently, however, have the effects been observed in Si device structures suitable for integration into other Si technologies. In this talk, the background of work in Si will be reviewed and its applications to unique device and circuit architectures will be discussed. Experimental results obtained using double-gated quantum dots embedded within a Si MOSFET will be discussed. While the present results are primarily at low temperature, they promise the application of single-electron technology to more integrated circuitry.
AB - Single-electron charging of small quantum dot structures has been observed for many years. Only recently, however, have the effects been observed in Si device structures suitable for integration into other Si technologies. In this talk, the background of work in Si will be reviewed and its applications to unique device and circuit architectures will be discussed. Experimental results obtained using double-gated quantum dots embedded within a Si MOSFET will be discussed. While the present results are primarily at low temperature, they promise the application of single-electron technology to more integrated circuitry.
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U2 - 10.1016/S1386-9477(00)00179-X
DO - 10.1016/S1386-9477(00)00179-X
M3 - Article
AN - SCOPUS:0035155238
SN - 1386-9477
VL - 9
SP - 69
EP - 75
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 1
ER -