Single electron calculations for the Si L2, 3 near edge structure

Xudong Weng, Peter Rez, P. E. Batson

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We show, for the first time, that the near edge structure of the crystalline silicon L2, 3 edge in absorption spectroscopy at an energy resolution of 0.3 eV can be largely explained without invoking many-body effects, or core excitons. Previous attempts to compare experimental results with total density of final states, without matrix element weighting, have lead to erroneous interpretations.

Original languageEnglish (US)
Pages (from-to)1013-1016
Number of pages4
JournalSolid State Communications
Volume74
Issue number9
DOIs
StatePublished - 1990

Fingerprint

Silicon
Absorption spectroscopy
Excitons
Crystalline materials
Electrons
absorption spectroscopy
electrons
excitons
silicon
matrices
LDS 751
energy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Single electron calculations for the Si L2, 3 near edge structure. / Weng, Xudong; Rez, Peter; Batson, P. E.

In: Solid State Communications, Vol. 74, No. 9, 1990, p. 1013-1016.

Research output: Contribution to journalArticle

Weng, Xudong ; Rez, Peter ; Batson, P. E. / Single electron calculations for the Si L2, 3 near edge structure. In: Solid State Communications. 1990 ; Vol. 74, No. 9. pp. 1013-1016.
@article{1ba5284fca154b4db44206e601383c4e,
title = "Single electron calculations for the Si L2, 3 near edge structure",
abstract = "We show, for the first time, that the near edge structure of the crystalline silicon L2, 3 edge in absorption spectroscopy at an energy resolution of 0.3 eV can be largely explained without invoking many-body effects, or core excitons. Previous attempts to compare experimental results with total density of final states, without matrix element weighting, have lead to erroneous interpretations.",
author = "Xudong Weng and Peter Rez and Batson, {P. E.}",
year = "1990",
doi = "10.1016/0038-1098(90)90476-R",
language = "English (US)",
volume = "74",
pages = "1013--1016",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "9",

}

TY - JOUR

T1 - Single electron calculations for the Si L2, 3 near edge structure

AU - Weng, Xudong

AU - Rez, Peter

AU - Batson, P. E.

PY - 1990

Y1 - 1990

N2 - We show, for the first time, that the near edge structure of the crystalline silicon L2, 3 edge in absorption spectroscopy at an energy resolution of 0.3 eV can be largely explained without invoking many-body effects, or core excitons. Previous attempts to compare experimental results with total density of final states, without matrix element weighting, have lead to erroneous interpretations.

AB - We show, for the first time, that the near edge structure of the crystalline silicon L2, 3 edge in absorption spectroscopy at an energy resolution of 0.3 eV can be largely explained without invoking many-body effects, or core excitons. Previous attempts to compare experimental results with total density of final states, without matrix element weighting, have lead to erroneous interpretations.

UR - http://www.scopus.com/inward/record.url?scp=0025442428&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025442428&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(90)90476-R

DO - 10.1016/0038-1098(90)90476-R

M3 - Article

AN - SCOPUS:0025442428

VL - 74

SP - 1013

EP - 1016

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 9

ER -