Simultaneous observation of electron and hole velocity overshoots in an Al0.3Ga0.7As-based p-i-n semiconductor, nanostructure

W. Liang, H. Lee, Kong-Thon Tsen, O. F. Sankey, D. K. Ferry

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Abstract

An investigation about simultaneous observation of electron and hole velocity overshoots in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure was presented. Raman spectroscopy was used for the analysis. Direct observation of electron and hole velocity overshoots was made. Explanation of experimental results was made in terms of electron and hole scattering processes.

Original languageEnglish (US)
Pages (from-to)3999-4001
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number21
DOIs
StatePublished - Nov 18 2002

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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