Simultaneous observation of electron and hole velocity overshoots in an Al0.3Ga0.7As-based p-i-n semiconductor, nanostructure

W. Liang; H. Lee; Kong-Thon Tsen; O. F. Sankey; D. K. Ferry

doi:10.1063/1.1522497

Simultaneous observation of electron and hole velocity overshoots in an Al_0.3Ga_0.7As-based p-i-n semiconductor, nanostructure

W. Liang, H. Lee, Kong-Thon Tsen, O. F. Sankey, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

An investigation about simultaneous observation of electron and hole velocity overshoots in an Al_0.3Ga_0.7As-based p-i-n semiconductor nanostructure was presented. Raman spectroscopy was used for the analysis. Direct observation of electron and hole velocity overshoots was made. Explanation of experimental results was made in terms of electron and hole scattering processes.

Original language	English (US)
Pages (from-to)	3999-4001
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	21
DOIs	https://doi.org/10.1063/1.1522497
State	Published - Nov 18 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1522497

Cite this

@article{42d31edf26154c61b853c60579e8e484,

title = "Simultaneous observation of electron and hole velocity overshoots in an Al0.3Ga0.7As-based p-i-n semiconductor, nanostructure",

abstract = "An investigation about simultaneous observation of electron and hole velocity overshoots in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure was presented. Raman spectroscopy was used for the analysis. Direct observation of electron and hole velocity overshoots was made. Explanation of experimental results was made in terms of electron and hole scattering processes.",

author = "W. Liang and H. Lee and Kong-Thon Tsen and Sankey, {O. F.} and Ferry, {D. K.}",

year = "2002",

month = nov,

day = "18",

doi = "10.1063/1.1522497",

language = "English (US)",

volume = "81",

pages = "3999--4001",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - Simultaneous observation of electron and hole velocity overshoots in an Al0.3Ga0.7As-based p-i-n semiconductor, nanostructure

AU - Liang, W.

AU - Lee, H.

AU - Tsen, Kong-Thon

AU - Sankey, O. F.

AU - Ferry, D. K.

PY - 2002/11/18

Y1 - 2002/11/18

N2 - An investigation about simultaneous observation of electron and hole velocity overshoots in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure was presented. Raman spectroscopy was used for the analysis. Direct observation of electron and hole velocity overshoots was made. Explanation of experimental results was made in terms of electron and hole scattering processes.

AB - An investigation about simultaneous observation of electron and hole velocity overshoots in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure was presented. Raman spectroscopy was used for the analysis. Direct observation of electron and hole velocity overshoots was made. Explanation of experimental results was made in terms of electron and hole scattering processes.

UR - http://www.scopus.com/inward/record.url?scp=0037132313&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037132313&partnerID=8YFLogxK

U2 - 10.1063/1.1522497

DO - 10.1063/1.1522497

M3 - Article

AN - SCOPUS:0037132313

SN - 0003-6951

VL - 81

SP - 3999

EP - 4001

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Simultaneous observation of electron and hole velocity overshoots in an Al_0.3Ga_0.7As-based p-i-n semiconductor, nanostructure

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this