An investigation about simultaneous observation of electron and hole velocity overshoots in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure was presented. Raman spectroscopy was used for the analysis. Direct observation of electron and hole velocity overshoots was made. Explanation of experimental results was made in terms of electron and hole scattering processes.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)