Abstract
Indium gallium nitride (InGaN) alloys exhibit substantial potential for high-efficiency photovoltaics. However, theoretical promise still needs to be experimentally realized. This paper presents a detailed theoretical study to provide guidelines to achieve high-efficiency InGaN solar cells. While the efficiency of heterojunction devices is limited to ∼11%, homojunction devices can achieve suitable efficiencies, provided that highly p-type-doped InGaN layers and thick, single-phase InGaN films can be grown. Thus, we have developed a novel growth technology that facilitates growth of p-type nitride films with greatly improved hole concentration and growth of InGaN without phase separation, offering promise for future high-efficiency InGaN solar cells.
Original language | English (US) |
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Article number | 6683005 |
Pages (from-to) | 601-606 |
Number of pages | 6 |
Journal | IEEE Journal of Photovoltaics |
Volume | 4 |
Issue number | 2 |
DOIs | |
State | Published - Mar 2014 |
Keywords
- Crystal microstructure
- doping
- indium gallium nitride (InGaN)
- semiconductor device modeling
- semiconductor growth
- solar cell
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering