Simulations, practical limitations, and novel growth technology for InGaN-based solar cells

Chloe A M Fabien, Michael Moseley, Brendan Gunning, W. Alan Doolittle, Alec M. Fischer, Yong O. Wei, Fernando Ponce

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Indium gallium nitride (InGaN) alloys exhibit substantial potential for high-efficiency photovoltaics. However, theoretical promise still needs to be experimentally realized. This paper presents a detailed theoretical study to provide guidelines to achieve high-efficiency InGaN solar cells. While the efficiency of heterojunction devices is limited to ∼11%, homojunction devices can achieve suitable efficiencies, provided that highly p-type-doped InGaN layers and thick, single-phase InGaN films can be grown. Thus, we have developed a novel growth technology that facilitates growth of p-type nitride films with greatly improved hole concentration and growth of InGaN without phase separation, offering promise for future high-efficiency InGaN solar cells.

Original languageEnglish (US)
Article number6683005
Pages (from-to)601-606
Number of pages6
JournalIEEE Journal of Photovoltaics
Volume4
Issue number2
DOIs
StatePublished - Mar 2014

Fingerprint

Gallium nitride
Indium
gallium nitrides
indium
Solar cells
solar cells
simulation
heterojunction devices
Hole concentration
homojunctions
Nitrides
Phase separation
nitrides
Heterojunctions
gallium nitride

Keywords

  • Crystal microstructure
  • doping
  • indium gallium nitride (InGaN)
  • semiconductor device modeling
  • semiconductor growth
  • solar cell

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Fabien, C. A. M., Moseley, M., Gunning, B., Doolittle, W. A., Fischer, A. M., Wei, Y. O., & Ponce, F. (2014). Simulations, practical limitations, and novel growth technology for InGaN-based solar cells. IEEE Journal of Photovoltaics, 4(2), 601-606. [6683005]. https://doi.org/10.1109/JPHOTOV.2013.2292748

Simulations, practical limitations, and novel growth technology for InGaN-based solar cells. / Fabien, Chloe A M; Moseley, Michael; Gunning, Brendan; Doolittle, W. Alan; Fischer, Alec M.; Wei, Yong O.; Ponce, Fernando.

In: IEEE Journal of Photovoltaics, Vol. 4, No. 2, 6683005, 03.2014, p. 601-606.

Research output: Contribution to journalArticle

Fabien, CAM, Moseley, M, Gunning, B, Doolittle, WA, Fischer, AM, Wei, YO & Ponce, F 2014, 'Simulations, practical limitations, and novel growth technology for InGaN-based solar cells', IEEE Journal of Photovoltaics, vol. 4, no. 2, 6683005, pp. 601-606. https://doi.org/10.1109/JPHOTOV.2013.2292748
Fabien CAM, Moseley M, Gunning B, Doolittle WA, Fischer AM, Wei YO et al. Simulations, practical limitations, and novel growth technology for InGaN-based solar cells. IEEE Journal of Photovoltaics. 2014 Mar;4(2):601-606. 6683005. https://doi.org/10.1109/JPHOTOV.2013.2292748
Fabien, Chloe A M ; Moseley, Michael ; Gunning, Brendan ; Doolittle, W. Alan ; Fischer, Alec M. ; Wei, Yong O. ; Ponce, Fernando. / Simulations, practical limitations, and novel growth technology for InGaN-based solar cells. In: IEEE Journal of Photovoltaics. 2014 ; Vol. 4, No. 2. pp. 601-606.
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