Simulations of germanium epitaxial growth on the silicon (1 0 0) surface incorporating intermixing

R. Akis, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We present kinetic lattice Monte Carlo simulations of Ge deposition onto a reconstructed Si (1 0 0) surface. We account for the exchange of Ge with Si atoms in the substrate, considering two different exchange mechanisms: a dimer exchange mechanism whereby Ge-Ge dimers on the surface become intermixed with substrate Si atoms, and the exchange of Ge atoms below the surface to relieve misfit strain. We examine how Si-Ge exchange affects the interface between the materials when the growth simulations are done at different temperatures.

Original languageEnglish (US)
Pages (from-to)207-210
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume32
Issue number1-2 SPEC. ISS.
DOIs
StatePublished - May 1 2006

Keywords

  • Germanium
  • Kinetic lattice Monte Carlo
  • Silicon
  • Strain
  • Surface diffusion

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Simulations of germanium epitaxial growth on the silicon (1 0 0) surface incorporating intermixing'. Together they form a unique fingerprint.

Cite this