Simulations for surface profile imaging

Ping Lu; David Smith

doi:10.1016/0304-3991(88)90002-2

Simulations for surface profile imaging

Ping Lu, David Smith

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The feasibility of quantifying surface structures using the profile imaging technique in high-resolution electron microscopy has been considered using theoretical multi-slice simulations. The possibilities for observing surfaces with missing or additional atoms, or with reconstruction, have been investigated in detail, with reference to particular oxides (UO₂, TbO₂) and compound semiconductors (CdTe, GaAs). The influence of such factors as incident beam misalignment, accelerating voltage, objective lens defocus and crystal thickness on the apparent surface relaxation were also considered, together with the possibility of eliminating any artefacts by using a focal series restoration.

Original language	English (US)
Pages (from-to)	265-277
Number of pages	13
Journal	Ultramicroscopy
Volume	25
Issue number	4
DOIs	https://doi.org/10.1016/0304-3991(88)90002-2
State	Published - 1988

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

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10.1016/0304-3991(88)90002-2

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@article{61b90de6e15e48dab843b8cadd548ecd,

title = "Simulations for surface profile imaging",

abstract = "The feasibility of quantifying surface structures using the profile imaging technique in high-resolution electron microscopy has been considered using theoretical multi-slice simulations. The possibilities for observing surfaces with missing or additional atoms, or with reconstruction, have been investigated in detail, with reference to particular oxides (UO2, TbO2) and compound semiconductors (CdTe, GaAs). The influence of such factors as incident beam misalignment, accelerating voltage, objective lens defocus and crystal thickness on the apparent surface relaxation were also considered, together with the possibility of eliminating any artefacts by using a focal series restoration.",

author = "Ping Lu and David Smith",

note = "Funding Information: This work has been supported by NSF Grant DMR-8514583. We are grateful to Dr. G.J. WOOd for use of his image simulation programs and the referee (Dr. M.A. O'Keefe) for helpful comments.",

year = "1988",

doi = "10.1016/0304-3991(88)90002-2",

language = "English (US)",

volume = "25",

pages = "265--277",

journal = "Ultramicroscopy",

issn = "0304-3991",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - Simulations for surface profile imaging

AU - Lu, Ping

AU - Smith, David

N1 - Funding Information: This work has been supported by NSF Grant DMR-8514583. We are grateful to Dr. G.J. WOOd for use of his image simulation programs and the referee (Dr. M.A. O'Keefe) for helpful comments.

PY - 1988

Y1 - 1988

N2 - The feasibility of quantifying surface structures using the profile imaging technique in high-resolution electron microscopy has been considered using theoretical multi-slice simulations. The possibilities for observing surfaces with missing or additional atoms, or with reconstruction, have been investigated in detail, with reference to particular oxides (UO2, TbO2) and compound semiconductors (CdTe, GaAs). The influence of such factors as incident beam misalignment, accelerating voltage, objective lens defocus and crystal thickness on the apparent surface relaxation were also considered, together with the possibility of eliminating any artefacts by using a focal series restoration.

AB - The feasibility of quantifying surface structures using the profile imaging technique in high-resolution electron microscopy has been considered using theoretical multi-slice simulations. The possibilities for observing surfaces with missing or additional atoms, or with reconstruction, have been investigated in detail, with reference to particular oxides (UO2, TbO2) and compound semiconductors (CdTe, GaAs). The influence of such factors as incident beam misalignment, accelerating voltage, objective lens defocus and crystal thickness on the apparent surface relaxation were also considered, together with the possibility of eliminating any artefacts by using a focal series restoration.

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U2 - 10.1016/0304-3991(88)90002-2

DO - 10.1016/0304-3991(88)90002-2

M3 - Article

AN - SCOPUS:0023863517

SN - 0304-3991

VL - 25

SP - 265

EP - 277

JO - Ultramicroscopy

JF - Ultramicroscopy

IS - 4

ER -

Simulations for surface profile imaging

Abstract

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