Simulations for optimized piezoresistors

Dragan Mladenovic, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As a phenomenon, piezoresistive effect is well understood from the theoretical point of view. Experimental characterizations have also been done on a variety of uniformly doped samples. However, for modern LSI structures, with shallow diffused junctions that have steep gaussian profile, and short distances between electrodes, piezoresistive coefficients differ significantly from those for uniformly doped samples. This paper considers effects of doping profile, electric field level and its distribution on free carrier mobility in order to asses sensitivity of piezoresistors. Simulated performance over temperature range is analyzed as well.

Original languageEnglish (US)
Title of host publication2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
EditorsM. Laudon, B. Romanowicz
Pages106-109
Number of pages4
StatePublished - Dec 1 2000
Event2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 - San Diego, CA, United States
Duration: Mar 27 2000Mar 29 2000

Publication series

Name2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000

Other

Other2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
CountryUnited States
CitySan Diego, CA
Period3/27/003/29/00

Keywords

  • Diffused piezoresistors
  • Mobility
  • Shallow junctions

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Mladenovic, D., & Vasileska, D. (2000). Simulations for optimized piezoresistors. In M. Laudon, & B. Romanowicz (Eds.), 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 (pp. 106-109). (2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000).