Abstract

Pseudomorphic delta-doped ultrasubmicrometer-gate high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. Reasonable agreement between experimental and numerical results is obtained for a 70-nm gate length. We discuss the scaling of this device to shorter gate lengths and the role played by various dimensions in the structure. Devices with 20-nm gate lengths should produce fTs above 1.5 THz without difficulty. This paper demonstrates the power of particle-based simulation tools in capturing the relevant physics responsible for device operation and key to performance optimization.

Original languageEnglish (US)
Pages (from-to)2327-2338
Number of pages12
JournalIEEE Transactions on Electron Devices
Volume54
Issue number9
DOIs
StatePublished - Sep 1 2007

Keywords

  • Millimeter-wave transistors
  • Monte Carlo methods
  • Pseudomorphic high-electron mobility transistors (p-HEMTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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