Abstract

Pseudomorphic delta-doped ultrasubmicrometer-gate high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. Reasonable agreement between experimental and numerical results is obtained for a 70-nm gate length. We discuss the scaling of this device to shorter gate lengths and the role played by various dimensions in the structure. Devices with 20-nm gate lengths should produce fTs above 1.5 THz without difficulty. This paper demonstrates the power of particle-based simulation tools in capturing the relevant physics responsible for device operation and key to performance optimization.

Original languageEnglish (US)
Pages (from-to)2327-2338
Number of pages12
JournalIEEE Transactions on Electron Devices
Volume54
Issue number9
DOIs
StatePublished - Sep 2007

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High electron mobility transistors
high electron mobility transistors
simulators
Physics
Simulators
simulation
scaling
physics
optimization

Keywords

  • Millimeter-wave transistors
  • Monte Carlo methods
  • Pseudomorphic high-electron mobility transistors (p-HEMTs)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Simulation of ultrasubmicrometer-gate In0.52Al0.48 As/In0.75Ga0.25As/In0.52 Al0.48As/InP pseudomorphic HEMTs using a full-band Monte Carlo simulator. / Ayubi-Moak, Jason S.; Ferry, David K.; Goodnick, Stephen; Akis, Richard; Saraniti, Marco.

In: IEEE Transactions on Electron Devices, Vol. 54, No. 9, 09.2007, p. 2327-2338.

Research output: Contribution to journalArticle

@article{dedb2b39949b4b4288be1e9d942cae6d,
title = "Simulation of ultrasubmicrometer-gate In0.52Al0.48 As/In0.75Ga0.25As/In0.52 Al0.48As/InP pseudomorphic HEMTs using a full-band Monte Carlo simulator",
abstract = "Pseudomorphic delta-doped ultrasubmicrometer-gate high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. Reasonable agreement between experimental and numerical results is obtained for a 70-nm gate length. We discuss the scaling of this device to shorter gate lengths and the role played by various dimensions in the structure. Devices with 20-nm gate lengths should produce fTs above 1.5 THz without difficulty. This paper demonstrates the power of particle-based simulation tools in capturing the relevant physics responsible for device operation and key to performance optimization.",
keywords = "Millimeter-wave transistors, Monte Carlo methods, Pseudomorphic high-electron mobility transistors (p-HEMTs)",
author = "Ayubi-Moak, {Jason S.} and Ferry, {David K.} and Stephen Goodnick and Richard Akis and Marco Saraniti",
year = "2007",
month = "9",
doi = "10.1109/TED.2007.902902",
language = "English (US)",
volume = "54",
pages = "2327--2338",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

TY - JOUR

T1 - Simulation of ultrasubmicrometer-gate In0.52Al0.48 As/In0.75Ga0.25As/In0.52 Al0.48As/InP pseudomorphic HEMTs using a full-band Monte Carlo simulator

AU - Ayubi-Moak, Jason S.

AU - Ferry, David K.

AU - Goodnick, Stephen

AU - Akis, Richard

AU - Saraniti, Marco

PY - 2007/9

Y1 - 2007/9

N2 - Pseudomorphic delta-doped ultrasubmicrometer-gate high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. Reasonable agreement between experimental and numerical results is obtained for a 70-nm gate length. We discuss the scaling of this device to shorter gate lengths and the role played by various dimensions in the structure. Devices with 20-nm gate lengths should produce fTs above 1.5 THz without difficulty. This paper demonstrates the power of particle-based simulation tools in capturing the relevant physics responsible for device operation and key to performance optimization.

AB - Pseudomorphic delta-doped ultrasubmicrometer-gate high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. Reasonable agreement between experimental and numerical results is obtained for a 70-nm gate length. We discuss the scaling of this device to shorter gate lengths and the role played by various dimensions in the structure. Devices with 20-nm gate lengths should produce fTs above 1.5 THz without difficulty. This paper demonstrates the power of particle-based simulation tools in capturing the relevant physics responsible for device operation and key to performance optimization.

KW - Millimeter-wave transistors

KW - Monte Carlo methods

KW - Pseudomorphic high-electron mobility transistors (p-HEMTs)

UR - http://www.scopus.com/inward/record.url?scp=41749088282&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41749088282&partnerID=8YFLogxK

U2 - 10.1109/TED.2007.902902

DO - 10.1109/TED.2007.902902

M3 - Article

AN - SCOPUS:41749088282

VL - 54

SP - 2327

EP - 2338

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 9

ER -