Simulation of ultrasubmicrometer-gate In0.52Al0.48 As/In0.75Ga0.25As/In0.52 Al0.48As/InP pseudomorphic HEMTs using a full-band Monte Carlo simulator

Jason S. Ayubi-Moak; David K. Ferry; Stephen Goodnick; Richard Akis; Marco Saraniti

doi:10.1109/TED.2007.902902

Simulation of ultrasubmicrometer-gate In_0.52Al_0.48 As/In_0.75Ga_0.25As/In_0.52 Al_0.48As/InP pseudomorphic HEMTs using a full-band Monte Carlo simulator

Jason S. Ayubi-Moak, David K. Ferry, Stephen Goodnick, Richard Akis, Marco Saraniti

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Pseudomorphic delta-doped ultrasubmicrometer-gate high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. Reasonable agreement between experimental and numerical results is obtained for a 70-nm gate length. We discuss the scaling of this device to shorter gate lengths and the role played by various dimensions in the structure. Devices with 20-nm gate lengths should produce fTs above 1.5 THz without difficulty. This paper demonstrates the power of particle-based simulation tools in capturing the relevant physics responsible for device operation and key to performance optimization.

Original language	English (US)
Pages (from-to)	2327-2338
Number of pages	12
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	9
DOIs	https://doi.org/10.1109/TED.2007.902902
State	Published - Sep 2007

Keywords

Millimeter-wave transistors
Monte Carlo methods
Pseudomorphic high-electron mobility transistors (p-HEMTs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2007.902902

Cite this

@article{dedb2b39949b4b4288be1e9d942cae6d,

title = "Simulation of ultrasubmicrometer-gate In0.52Al0.48 As/In0.75Ga0.25As/In0.52 Al0.48As/InP pseudomorphic HEMTs using a full-band Monte Carlo simulator",

abstract = "Pseudomorphic delta-doped ultrasubmicrometer-gate high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. Reasonable agreement between experimental and numerical results is obtained for a 70-nm gate length. We discuss the scaling of this device to shorter gate lengths and the role played by various dimensions in the structure. Devices with 20-nm gate lengths should produce fTs above 1.5 THz without difficulty. This paper demonstrates the power of particle-based simulation tools in capturing the relevant physics responsible for device operation and key to performance optimization.",

keywords = "Millimeter-wave transistors, Monte Carlo methods, Pseudomorphic high-electron mobility transistors (p-HEMTs)",

author = "Ayubi-Moak, {Jason S.} and Ferry, {David K.} and Stephen Goodnick and Richard Akis and Marco Saraniti",

note = "Funding Information: Manuscript received January 3, 2007; revised May 16, 2007. This work was supported in part by the DARPA SWIFT project through the Army Research Laboratory under cooperative agreement W911NF-06-2-0012. The review of this paper was arranged by Editor A. Asenov.",

year = "2007",

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AU - Ayubi-Moak, Jason S.

AU - Ferry, David K.

AU - Goodnick, Stephen

AU - Akis, Richard

AU - Saraniti, Marco

N1 - Funding Information: Manuscript received January 3, 2007; revised May 16, 2007. This work was supported in part by the DARPA SWIFT project through the Army Research Laboratory under cooperative agreement W911NF-06-2-0012. The review of this paper was arranged by Editor A. Asenov.

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N2 - Pseudomorphic delta-doped ultrasubmicrometer-gate high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. Reasonable agreement between experimental and numerical results is obtained for a 70-nm gate length. We discuss the scaling of this device to shorter gate lengths and the role played by various dimensions in the structure. Devices with 20-nm gate lengths should produce fTs above 1.5 THz without difficulty. This paper demonstrates the power of particle-based simulation tools in capturing the relevant physics responsible for device operation and key to performance optimization.

AB - Pseudomorphic delta-doped ultrasubmicrometer-gate high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. Reasonable agreement between experimental and numerical results is obtained for a 70-nm gate length. We discuss the scaling of this device to shorter gate lengths and the role played by various dimensions in the structure. Devices with 20-nm gate lengths should produce fTs above 1.5 THz without difficulty. This paper demonstrates the power of particle-based simulation tools in capturing the relevant physics responsible for device operation and key to performance optimization.

KW - Millimeter-wave transistors

KW - Monte Carlo methods

KW - Pseudomorphic high-electron mobility transistors (p-HEMTs)

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