Simulation of Transistor-Level Radiation Effects on System-Level Performance Parameters

A. F. Witulski, N. Mahadevan, J. Kauppila, G. Karsai, A. Sternberg, R. D. Schrimpf, R. A. Reed, P. Adell, H. Schone, A. Daniel, A. Privat, Hugh Barnaby

Research output: Contribution to journalArticle

Abstract

A simulation paradigm is proposed to examine the effects of transistor-level degradation produced by total ionizing dose (TID) on top-level system performance parameters. The approach is demonstrated on a command and data handling (CDH) board for deep-space CubeSats. Simulation and postirradiation measurements of a temperature control loop show that TID degradation changes temperature regulation significantly.

Original languageEnglish (US)
Article number8736527
Pages (from-to)1634-1641
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume66
Issue number7
DOIs
StatePublished - Jul 1 2019

Fingerprint

Radiation effects
radiation effects
Transistors
transistors
degradation
Degradation
dosage
deep space
Data handling
temperature control
commands
Temperature control
simulation
Temperature
temperature

Keywords

  • Cosimulation
  • functional models
  • Questa
  • system modeling
  • SystemC
  • total ionizing dose (TID)
  • Verilog-Analog Mixed Signal (Verilog-AMS)
  • very high speed integrated circuit hardware description language (VHDL)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Witulski, A. F., Mahadevan, N., Kauppila, J., Karsai, G., Sternberg, A., Schrimpf, R. D., ... Barnaby, H. (2019). Simulation of Transistor-Level Radiation Effects on System-Level Performance Parameters. IEEE Transactions on Nuclear Science, 66(7), 1634-1641. [8736527]. https://doi.org/10.1109/TNS.2019.2922903

Simulation of Transistor-Level Radiation Effects on System-Level Performance Parameters. / Witulski, A. F.; Mahadevan, N.; Kauppila, J.; Karsai, G.; Sternberg, A.; Schrimpf, R. D.; Reed, R. A.; Adell, P.; Schone, H.; Daniel, A.; Privat, A.; Barnaby, Hugh.

In: IEEE Transactions on Nuclear Science, Vol. 66, No. 7, 8736527, 01.07.2019, p. 1634-1641.

Research output: Contribution to journalArticle

Witulski, AF, Mahadevan, N, Kauppila, J, Karsai, G, Sternberg, A, Schrimpf, RD, Reed, RA, Adell, P, Schone, H, Daniel, A, Privat, A & Barnaby, H 2019, 'Simulation of Transistor-Level Radiation Effects on System-Level Performance Parameters', IEEE Transactions on Nuclear Science, vol. 66, no. 7, 8736527, pp. 1634-1641. https://doi.org/10.1109/TNS.2019.2922903
Witulski AF, Mahadevan N, Kauppila J, Karsai G, Sternberg A, Schrimpf RD et al. Simulation of Transistor-Level Radiation Effects on System-Level Performance Parameters. IEEE Transactions on Nuclear Science. 2019 Jul 1;66(7):1634-1641. 8736527. https://doi.org/10.1109/TNS.2019.2922903
Witulski, A. F. ; Mahadevan, N. ; Kauppila, J. ; Karsai, G. ; Sternberg, A. ; Schrimpf, R. D. ; Reed, R. A. ; Adell, P. ; Schone, H. ; Daniel, A. ; Privat, A. ; Barnaby, Hugh. / Simulation of Transistor-Level Radiation Effects on System-Level Performance Parameters. In: IEEE Transactions on Nuclear Science. 2019 ; Vol. 66, No. 7. pp. 1634-1641.
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