Simulation of TID effects in a high voltage ring oscillator

Garrett J. Schlenvogt; Hugh Barnaby; Jeff Wilkinson; Scott Morrison; Larry Tyler

doi:10.1109/TNS.2013.2284636

Simulation of TID effects in a high voltage ring oscillator

Garrett J. Schlenvogt, Hugh Barnaby, Jeff Wilkinson, Scott Morrison, Larry Tyler

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Oscillation frequency of a high voltage ring oscillator is observed to change non-linearly with increasing dose. The change in oscillation is caused by buildup of oxide-trapped charge in both gate and isolation oxides post-radiation. A simulation methodology is described and implemented which successfully re-creates oscillator response by way of radiation-enabled simulation. Implementation of radiation-enabled simulation of ring oscillator is discussed. Simulation allows projection of oscillator response in-situ, allowing designers to anticipate changes in oscillation and implement radiation hardening as required. Alternatively, implementation of a ring oscillator as a reliability monitor in a large-scale circuit allows easily detectable observation of total dose effects on transistors.

Original language	English (US)
Article number	6678312
Pages (from-to)	4547-4554
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	60
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2013.2284636
State	Published - Dec 2013

Keywords

Design
oxide trapped charge
radiation
ring oscillator
shallow trench isolation
total ionizing dose

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2013.2284636

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title = "Simulation of TID effects in a high voltage ring oscillator",

abstract = "Oscillation frequency of a high voltage ring oscillator is observed to change non-linearly with increasing dose. The change in oscillation is caused by buildup of oxide-trapped charge in both gate and isolation oxides post-radiation. A simulation methodology is described and implemented which successfully re-creates oscillator response by way of radiation-enabled simulation. Implementation of radiation-enabled simulation of ring oscillator is discussed. Simulation allows projection of oscillator response in-situ, allowing designers to anticipate changes in oscillation and implement radiation hardening as required. Alternatively, implementation of a ring oscillator as a reliability monitor in a large-scale circuit allows easily detectable observation of total dose effects on transistors.",

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AU - Schlenvogt, Garrett J.

AU - Barnaby, Hugh

AU - Wilkinson, Jeff

AU - Morrison, Scott

AU - Tyler, Larry

PY - 2013/12

Y1 - 2013/12

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AB - Oscillation frequency of a high voltage ring oscillator is observed to change non-linearly with increasing dose. The change in oscillation is caused by buildup of oxide-trapped charge in both gate and isolation oxides post-radiation. A simulation methodology is described and implemented which successfully re-creates oscillator response by way of radiation-enabled simulation. Implementation of radiation-enabled simulation of ring oscillator is discussed. Simulation allows projection of oscillator response in-situ, allowing designers to anticipate changes in oscillation and implement radiation hardening as required. Alternatively, implementation of a ring oscillator as a reliability monitor in a large-scale circuit allows easily detectable observation of total dose effects on transistors.

KW - Design

KW - oxide trapped charge

KW - radiation

KW - ring oscillator

KW - shallow trench isolation

KW - total ionizing dose

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Simulation of TID effects in a high voltage ring oscillator

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Keywords

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