Simulation of the impact of process variation on the optimized 10-nm FinFET

Hasanur R. Khan, Denis Mamaluy, Dragica Vasileska

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

We examined the influence of process variation on device performance of the optimized 10-nm FinFET device using a fully self-consistent quantum-mechanical transport simulator based on the contact block reduction method. Sensitivity of the on-current, leakage currents, threshold voltage, drain-induced barrier lowering, and subthreshold swing for the optimized FinFET to process variation at room temperature have been investigated. Subthreshold source-to-drain leakage current is found to be the most sensitive parameter to process variation. Gate leakage current has been analyzed for both poly-Si gates and gates with the work function of 4.35 eV. For poly-Si gates, the gate leakage is found to influence the subthreshold swing below or at a gate oxide thickness of 1 nm. Device performance has also been analyzed at "slow process" corner to estimate the worst case degradation in performance matrices of the considered nano-FinFET.

Original languageEnglish (US)
Pages (from-to)2134-2141
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume55
Issue number8
DOIs
StatePublished - Aug 18 2008

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Keywords

  • Contact block reduction (CBR) method
  • FinFET
  • Process variation
  • Quantum transport
  • Slow corner analysis

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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