@inproceedings{fa9250dbb05c4abd89801251a7f908e0,
title = "Simulation of the high temperature performance of InGaN multiple quantum well solar cells",
abstract = "This work presents TCAD simulation for InGaN multiple quantum well (MQW) solar cell at high temperature and high solar concentration that have recently been reported. A MQW device with 40 periods of In0.12Ga0.88N/GaN quantum well stack is simulated. Simulation results are in close agreement with experimental I-V data measured up to 450 °C and under concentration of up to 300 suns. The impact of polarization charges at the nitride hetero-interface is also investigated. The internal quantum efficiency (IQE) is simulated and compared with experimental data as well. A drop in IQE with increasing polarization screening factor is observed, which demonstrates that polarization effects reduce the carrier collection probability of this device structure.",
keywords = "High Temperature, Multiple quantum well, Nitride, Photovoltaic, TCAD simulation",
author = "Y. Fang and H. McFavilen and D. Ding and Dragica Vasileska and Stephen Goodnick",
note = "Funding Information: The information, data, and work presented here was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000470. Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",
year = "2017",
doi = "10.1109/PVSC.2017.8366222",
language = "English (US)",
series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "914--916",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
}