Simulation of the high temperature performance of InGaN multiple quantum well solar cells

Y. Fang; H. McFavilen; D. Ding; Dragica Vasileska; Stephen Goodnick

doi:10.1109/PVSC.2016.7749792

Simulation of the high temperature performance of InGaN multiple quantum well solar cells

Y. Fang, H. McFavilen, D. Ding, Dragica Vasileska, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

This work presents TCAD simulation for InGaN multiple quantum well (MQW) solar cell at high temperature and high solar concentration that have recently been reported. A MQW device with 40 periods of In0.12Ga0.88N/GaN quantum well stack is simulated. Simulation results are in close agreement with experimental I-V data measured up to 450 °C and under concentration of up to 300 suns. The impact of polarization charges at the nitride hetero-interface is also investigated. The internal quantum efficiency (IQE) is simulated and compared with experimental data as well. A drop in IQE with increasing polarization screening factor is observed, which demonstrates that polarization effects reduce the carrier collection probability of this device structure.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1138-1141
Number of pages	4
Volume	2016-November
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749792
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

Keywords

High Temperature
Multiple quantum well
nitride
photovoltaic
TCAD simulation

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2016.7749792

Cite this

Fang, Y., McFavilen, H., Ding, D., Vasileska, D., & Goodnick, S. (2016). Simulation of the high temperature performance of InGaN multiple quantum well solar cells. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 1138-1141). Article 7749792 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749792

Simulation of the high temperature performance of InGaN multiple quantum well solar cells. / Fang, Y.; McFavilen, H.; Ding, D. et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 1138-1141 7749792.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fang, Y, McFavilen, H, Ding, D, Vasileska, D & Goodnick, S 2016, Simulation of the high temperature performance of InGaN multiple quantum well solar cells. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749792, Institute of Electrical and Electronics Engineers Inc., pp. 1138-1141, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749792

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abstract = "This work presents TCAD simulation for InGaN multiple quantum well (MQW) solar cell at high temperature and high solar concentration that have recently been reported. A MQW device with 40 periods of In0.12Ga0.88N/GaN quantum well stack is simulated. Simulation results are in close agreement with experimental I-V data measured up to 450 °C and under concentration of up to 300 suns. The impact of polarization charges at the nitride hetero-interface is also investigated. The internal quantum efficiency (IQE) is simulated and compared with experimental data as well. A drop in IQE with increasing polarization screening factor is observed, which demonstrates that polarization effects reduce the carrier collection probability of this device structure.",

keywords = "High Temperature, Multiple quantum well, nitride, photovoltaic, TCAD simulation",

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N2 - This work presents TCAD simulation for InGaN multiple quantum well (MQW) solar cell at high temperature and high solar concentration that have recently been reported. A MQW device with 40 periods of In0.12Ga0.88N/GaN quantum well stack is simulated. Simulation results are in close agreement with experimental I-V data measured up to 450 °C and under concentration of up to 300 suns. The impact of polarization charges at the nitride hetero-interface is also investigated. The internal quantum efficiency (IQE) is simulated and compared with experimental data as well. A drop in IQE with increasing polarization screening factor is observed, which demonstrates that polarization effects reduce the carrier collection probability of this device structure.

AB - This work presents TCAD simulation for InGaN multiple quantum well (MQW) solar cell at high temperature and high solar concentration that have recently been reported. A MQW device with 40 periods of In0.12Ga0.88N/GaN quantum well stack is simulated. Simulation results are in close agreement with experimental I-V data measured up to 450 °C and under concentration of up to 300 suns. The impact of polarization charges at the nitride hetero-interface is also investigated. The internal quantum efficiency (IQE) is simulated and compared with experimental data as well. A drop in IQE with increasing polarization screening factor is observed, which demonstrates that polarization effects reduce the carrier collection probability of this device structure.

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KW - Multiple quantum well

KW - nitride

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KW - TCAD simulation

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Simulation of the high temperature performance of InGaN multiple quantum well solar cells

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Keywords

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