Abstract

This work presents TCAD simulation for InGaN multiple quantum well (MQW) solar cell at high temperature and high solar concentration that have recently been reported. A MQW device with 40 periods of In0.12Ga0.88N/GaN quantum well stack is simulated. Simulation results are in close agreement with experimental I-V data measured up to 450 °C and under concentration of up to 300 suns. The impact of polarization charges at the nitride hetero-interface is also investigated. The internal quantum efficiency (IQE) is simulated and compared with experimental data as well. A drop in IQE with increasing polarization screening factor is observed, which demonstrates that polarization effects reduce the carrier collection probability of this device structure.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1138-1141
Number of pages4
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Fingerprint

Semiconductor quantum wells
Solar cells
Polarization
Quantum efficiency
Nitrides
Temperature
Screening

Keywords

  • High Temperature
  • Multiple quantum well
  • nitride
  • photovoltaic
  • TCAD simulation

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Fang, Y., McFavilen, H., Ding, D., Vasileska, D., & Goodnick, S. (2016). Simulation of the high temperature performance of InGaN multiple quantum well solar cells. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 1138-1141). [7749792] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749792

Simulation of the high temperature performance of InGaN multiple quantum well solar cells. / Fang, Y.; McFavilen, H.; Ding, D.; Vasileska, Dragica; Goodnick, Stephen.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 1138-1141 7749792.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fang, Y, McFavilen, H, Ding, D, Vasileska, D & Goodnick, S 2016, Simulation of the high temperature performance of InGaN multiple quantum well solar cells. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749792, Institute of Electrical and Electronics Engineers Inc., pp. 1138-1141, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749792
Fang Y, McFavilen H, Ding D, Vasileska D, Goodnick S. Simulation of the high temperature performance of InGaN multiple quantum well solar cells. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1138-1141. 7749792 https://doi.org/10.1109/PVSC.2016.7749792
Fang, Y. ; McFavilen, H. ; Ding, D. ; Vasileska, Dragica ; Goodnick, Stephen. / Simulation of the high temperature performance of InGaN multiple quantum well solar cells. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. pp. 1138-1141
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abstract = "This work presents TCAD simulation for InGaN multiple quantum well (MQW) solar cell at high temperature and high solar concentration that have recently been reported. A MQW device with 40 periods of In0.12Ga0.88N/GaN quantum well stack is simulated. Simulation results are in close agreement with experimental I-V data measured up to 450 °C and under concentration of up to 300 suns. The impact of polarization charges at the nitride hetero-interface is also investigated. The internal quantum efficiency (IQE) is simulated and compared with experimental data as well. A drop in IQE with increasing polarization screening factor is observed, which demonstrates that polarization effects reduce the carrier collection probability of this device structure.",
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