TY - GEN
T1 - Simulation of random telegraph noise with 2-stage equivalent circuit
AU - Ye, Yun
AU - Wang, Chi Chao
AU - Cao, Yu
PY - 2010
Y1 - 2010
N2 - With the continuous reduction of CMOS device dimension, the importance of Random Telegraph Noise (RTN) keeps growing. To determine its impact on circuit performance and optimize the design, it is essential to physically model RTN effect and embed it into the standard simulation environment. In this paper, a new simulation method of time domain RTN effect is proposed to benchmark important digital circuits: (1) A two-stage L-shaped circuit is proposed to generate RTN signal by integrating a white noise source. An L-shaped circuit is a RC filter connected with an ideal comparator, where RC values are calibrated with the physical property of RTN; (2) This sub-circuit is fully compatible with SPICE, enabling the time domain analysis in nanometer scale digital design; (3) The importance of discrete RTN is demonstrated on a 32nm SRAM design and a 22nm low power ring oscillator (RO), using the proposed method. As compared to traditional 1/f noise, the impact of RTN is more significant under low voltages, leading to tremendous differences in the prediction of Vccmin and failure probability in SRAM, as well as jitter noise in RO.
AB - With the continuous reduction of CMOS device dimension, the importance of Random Telegraph Noise (RTN) keeps growing. To determine its impact on circuit performance and optimize the design, it is essential to physically model RTN effect and embed it into the standard simulation environment. In this paper, a new simulation method of time domain RTN effect is proposed to benchmark important digital circuits: (1) A two-stage L-shaped circuit is proposed to generate RTN signal by integrating a white noise source. An L-shaped circuit is a RC filter connected with an ideal comparator, where RC values are calibrated with the physical property of RTN; (2) This sub-circuit is fully compatible with SPICE, enabling the time domain analysis in nanometer scale digital design; (3) The importance of discrete RTN is demonstrated on a 32nm SRAM design and a 22nm low power ring oscillator (RO), using the proposed method. As compared to traditional 1/f noise, the impact of RTN is more significant under low voltages, leading to tremendous differences in the prediction of Vccmin and failure probability in SRAM, as well as jitter noise in RO.
KW - Random telegraph noise
KW - Ring oscillator
KW - SRAM
KW - Spice simulation
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U2 - 10.1109/ICCAD.2010.5654254
DO - 10.1109/ICCAD.2010.5654254
M3 - Conference contribution
AN - SCOPUS:78650910634
SN - 9781424481927
T3 - IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
SP - 709
EP - 713
BT - 2010 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2010
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2010 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2010
Y2 - 7 November 2010 through 11 November 2010
ER -