Simulation of quantum transport in an ultra-small SOI MOSFET

M. J. Gilbert, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Industry predictions estimate that, within a few years, semiconductor devices with active regions of less than 10 nm in length will be in production. It is well known that the active regions in these devices are smaller than the relative phase coherence lengths, and quantum transport will govern the operation of these devices. With the advent of tri-gate and quantum wire devices, 2D transport simulations become inadequate as the third dimension (width) must be included to account for the underlying physics present in the problem. Here, we present results of an efficient 3D, self-consistent quantum transport simulation applied to an ultra-small SOI MOSFET. We find that the transition between a wide source contact and a discretely doped, narrow channel sets up a resonant tunneling situation in which the channel becomes fully populated and then dissipates as the gate voltage is swept.

Original languageEnglish (US)
Title of host publicationInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
EditorsR. Huang, M. Yu, J.J. Liou, T. Hiramito, C. Claeys
Pages965-970
Number of pages6
Volume2
StatePublished - 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: Oct 18 2004Oct 21 2004

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period10/18/0410/21/04

ASJC Scopus subject areas

  • Engineering(all)

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