Simulation of polarization charge on AlGaN/GaN high electron mobility transistors: Comparison to electron holography

The effects of polarization charge on the electrostatic potential distribution across the heterostructure of a AlGaN/GaN high electron mobility transistor device have been investigated. Simulations were performed using a full-band cellular Monte Carlo simulator, which included electronic dispersion and the phonon spectra. Quantum effects were taken into account using the effective potential method. Experimental extraction of potential profiles across the device was carried out using off-axis electron holography. Based on comparison to simulations, the differences between the theoretical predictions and experimental results could be explained, thereby providing better understanding of device operation.